850/940-nm VCSEL for optical communication and 3D sensing

This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differentia...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Cheng Chih-Hsien, Shen Chih-Chiang, Kao Hsuan-Yun, Hsieh Dan-Hua, Wang Huai-Yung, Yeh Yen-Wei, Lu Yun-Ting, Huang Chen Sung-Wen, Tsai Cheng-Ting, Chi Yu-Chieh, Kao Tsung Sheng, Wu Chao-Hsin, Kuo Hao-Chung, Lee Po-Tsung, Lin Gong-Ru
Formato: article
Lenguaje:EN
Publicado: Institue of Optics and Electronics, Chinese Academy of Sciences 2018
Materias:
Acceso en línea:https://doaj.org/article/59f56e48c2bd4733bef4319afdd70a46
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
Descripción
Sumario:This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.