Current tuned slotted Y‐branch laser for wafer thickness measurements with THz radiation
Abstract A slotted Y‐branch laser diode that emits two spectral modes at a difference frequency of about 1 THz is investigated in the context of photonic based cw‐THz measurements. The beating frequency of the emitted laser light can be tuned by ±10.5 GHz around 1 THz by changing the applied laser c...
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Wiley
2021
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oai:doaj.org-article:5a05deb51aad4475956f282a093c7cad2021-11-19T05:42:54ZCurrent tuned slotted Y‐branch laser for wafer thickness measurements with THz radiation1350-911X0013-519410.1049/ell2.12314https://doaj.org/article/5a05deb51aad4475956f282a093c7cad2021-11-01T00:00:00Zhttps://doi.org/10.1049/ell2.12314https://doaj.org/toc/0013-5194https://doaj.org/toc/1350-911XAbstract A slotted Y‐branch laser diode that emits two spectral modes at a difference frequency of about 1 THz is investigated in the context of photonic based cw‐THz measurements. The beating frequency of the emitted laser light can be tuned by ±10.5 GHz around 1 THz by changing the applied laser current, which allows for potentially fast measurements. A second spectral window of ±6.5 GHz was found at 850 GHz. Pointwise scanning of the difference frequency is demonstrated with thickness determination of HRFZ‐Si wafer samples as a possible application scenario.N. SurkampA. GerlingJ. O'GormanM. HonsbergS. SchmidtmannU. NandiS. PreuJ. SacherC. BrennerM. R. HofmannWileyarticleElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENElectronics Letters, Vol 57, Iss 24, Pp 936-938 (2021) |
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Electrical engineering. Electronics. Nuclear engineering TK1-9971 |
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Electrical engineering. Electronics. Nuclear engineering TK1-9971 N. Surkamp A. Gerling J. O'Gorman M. Honsberg S. Schmidtmann U. Nandi S. Preu J. Sacher C. Brenner M. R. Hofmann Current tuned slotted Y‐branch laser for wafer thickness measurements with THz radiation |
description |
Abstract A slotted Y‐branch laser diode that emits two spectral modes at a difference frequency of about 1 THz is investigated in the context of photonic based cw‐THz measurements. The beating frequency of the emitted laser light can be tuned by ±10.5 GHz around 1 THz by changing the applied laser current, which allows for potentially fast measurements. A second spectral window of ±6.5 GHz was found at 850 GHz. Pointwise scanning of the difference frequency is demonstrated with thickness determination of HRFZ‐Si wafer samples as a possible application scenario. |
format |
article |
author |
N. Surkamp A. Gerling J. O'Gorman M. Honsberg S. Schmidtmann U. Nandi S. Preu J. Sacher C. Brenner M. R. Hofmann |
author_facet |
N. Surkamp A. Gerling J. O'Gorman M. Honsberg S. Schmidtmann U. Nandi S. Preu J. Sacher C. Brenner M. R. Hofmann |
author_sort |
N. Surkamp |
title |
Current tuned slotted Y‐branch laser for wafer thickness measurements with THz radiation |
title_short |
Current tuned slotted Y‐branch laser for wafer thickness measurements with THz radiation |
title_full |
Current tuned slotted Y‐branch laser for wafer thickness measurements with THz radiation |
title_fullStr |
Current tuned slotted Y‐branch laser for wafer thickness measurements with THz radiation |
title_full_unstemmed |
Current tuned slotted Y‐branch laser for wafer thickness measurements with THz radiation |
title_sort |
current tuned slotted y‐branch laser for wafer thickness measurements with thz radiation |
publisher |
Wiley |
publishDate |
2021 |
url |
https://doaj.org/article/5a05deb51aad4475956f282a093c7cad |
work_keys_str_mv |
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