High-performance gallium nitride dielectric metalenses for imaging in the visible

Abstract Metalens is one of the most promising applications for the development of metasurfaces. A wide variety of materials have been applied to metalenses working at certain spectral bands in order to meet the requirements of high efficiency and low-cost fabrication. Among these materials, wide-ba...

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Main Authors:	Meng-Hsin Chen, Wei-Ning Chou, Vin-Cent Su, Chieh-Hsiung Kuan, Hoang Yan Lin
Format:	article
Language:	EN
Published:	Nature Portfolio 2021
Subjects:	Medicine R Science Q
Online Access:	https://doaj.org/article/5a1ccb474bc645079217cc27845ea06e
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spelling	oai:doaj.org-article:5a1ccb474bc645079217cc27845ea06e2021-12-02T14:02:55ZHigh-performance gallium nitride dielectric metalenses for imaging in the visible10.1038/s41598-021-86057-w2045-2322https://doaj.org/article/5a1ccb474bc645079217cc27845ea06e2021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-86057-whttps://doaj.org/toc/2045-2322Abstract Metalens is one of the most promising applications for the development of metasurfaces. A wide variety of materials have been applied to metalenses working at certain spectral bands in order to meet the requirements of high efficiency and low-cost fabrication. Among these materials, wide-bandgap gallium nitride (GaN) is one of the most promising materials considering its advantages especially in semiconductor manufacturing. In this work, GaN has been utilized to fabricate the high-performance metalenses operating at visible wavelengths of 405, 532, and 633 nm with efficiencies up to 79%, 84%, and 89%, respectively. The homemade 1951 United State Air Force (UASF) resolution test chart has also been fabricated in order to provide resolvable lines with widths as small as 870 nm. As shown in the experimental results for imaging, the metalens designed at 405 nm can provide extremely high resolution to clearly resolve the smallest lines with the nano-sized widths in the homemade resolution test chart. These extraordinary experimental results come from our successful development in design and fabrication for the metalenses composed of high-aspect-ratio GaN nanoposts with nearly vertical sidewalls.Meng-Hsin ChenWei-Ning ChouVin-Cent SuChieh-Hsiung KuanHoang Yan LinNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Meng-Hsin Chen Wei-Ning Chou Vin-Cent Su Chieh-Hsiung Kuan Hoang Yan Lin High-performance gallium nitride dielectric metalenses for imaging in the visible
description	Abstract Metalens is one of the most promising applications for the development of metasurfaces. A wide variety of materials have been applied to metalenses working at certain spectral bands in order to meet the requirements of high efficiency and low-cost fabrication. Among these materials, wide-bandgap gallium nitride (GaN) is one of the most promising materials considering its advantages especially in semiconductor manufacturing. In this work, GaN has been utilized to fabricate the high-performance metalenses operating at visible wavelengths of 405, 532, and 633 nm with efficiencies up to 79%, 84%, and 89%, respectively. The homemade 1951 United State Air Force (UASF) resolution test chart has also been fabricated in order to provide resolvable lines with widths as small as 870 nm. As shown in the experimental results for imaging, the metalens designed at 405 nm can provide extremely high resolution to clearly resolve the smallest lines with the nano-sized widths in the homemade resolution test chart. These extraordinary experimental results come from our successful development in design and fabrication for the metalenses composed of high-aspect-ratio GaN nanoposts with nearly vertical sidewalls.
format	article
author	Meng-Hsin Chen Wei-Ning Chou Vin-Cent Su Chieh-Hsiung Kuan Hoang Yan Lin
author_facet	Meng-Hsin Chen Wei-Ning Chou Vin-Cent Su Chieh-Hsiung Kuan Hoang Yan Lin
author_sort	Meng-Hsin Chen
title	High-performance gallium nitride dielectric metalenses for imaging in the visible
title_short	High-performance gallium nitride dielectric metalenses for imaging in the visible
title_full	High-performance gallium nitride dielectric metalenses for imaging in the visible
title_fullStr	High-performance gallium nitride dielectric metalenses for imaging in the visible
title_full_unstemmed	High-performance gallium nitride dielectric metalenses for imaging in the visible
title_sort	high-performance gallium nitride dielectric metalenses for imaging in the visible
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/5a1ccb474bc645079217cc27845ea06e
work_keys_str_mv	AT menghsinchen highperformancegalliumnitridedielectricmetalensesforimaginginthevisible AT weiningchou highperformancegalliumnitridedielectricmetalensesforimaginginthevisible AT vincentsu highperformancegalliumnitridedielectricmetalensesforimaginginthevisible AT chiehhsiungkuan highperformancegalliumnitridedielectricmetalensesforimaginginthevisible AT hoangyanlin highperformancegalliumnitridedielectricmetalensesforimaginginthevisible
_version_	1718392080628187136

High-performance gallium nitride dielectric metalenses for imaging in the visible

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