Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory

We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid bilayer was explored for developing flexible r...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Jin Mo Kim, Sung Won Hwang
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	HfOx GQD RRAM memristive devices resistive switching Organic chemistry QD241-441
Acceso en línea:	https://doaj.org/article/5a2e12cbae9941f78629836c6eb01799
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:5a2e12cbae9941f78629836c6eb01799
record_format	dspace
spelling	oai:doaj.org-article:5a2e12cbae9941f78629836c6eb017992021-11-25T18:27:01ZBipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory10.3390/molecules262267581420-3049https://doaj.org/article/5a2e12cbae9941f78629836c6eb017992021-11-01T00:00:00Zhttps://www.mdpi.com/1420-3049/26/22/6758https://doaj.org/toc/1420-3049We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid bilayer was explored for developing flexible resistive random access memory (RRAM) devices. A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 0.3–0.6 wt % PVP-GQD, V<sub>f</sub> changed from 2.27–2.74 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. In addition, as the PVP-GQD concentration increased, the depth of the interfacial defect decreased, and confirmed the repetition of appropriate electrical properties through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al<sup>+</sup> ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.Jin Mo KimSung Won HwangMDPI AGarticleHfOxGQDRRAMmemristive devicesresistive switchingOrganic chemistryQD241-441ENMolecules, Vol 26, Iss 6758, p 6758 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	HfOx GQD RRAM memristive devices resistive switching Organic chemistry QD241-441
spellingShingle	HfOx GQD RRAM memristive devices resistive switching Organic chemistry QD241-441 Jin Mo Kim Sung Won Hwang Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory
description	We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid bilayer was explored for developing flexible resistive random access memory (RRAM) devices. A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 0.3–0.6 wt % PVP-GQD, V<sub>f</sub> changed from 2.27–2.74 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. In addition, as the PVP-GQD concentration increased, the depth of the interfacial defect decreased, and confirmed the repetition of appropriate electrical properties through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al<sup>+</sup> ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.
format	article
author	Jin Mo Kim Sung Won Hwang
author_facet	Jin Mo Kim Sung Won Hwang
author_sort	Jin Mo Kim
title	Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory
title_short	Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory
title_full	Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory
title_fullStr	Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory
title_full_unstemmed	Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory
title_sort	bipolar resistive switching behavior of pvp-gqd/hfox/ito/graphene hybrid flexible resistive random access memory
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/5a2e12cbae9941f78629836c6eb01799
work_keys_str_mv	AT jinmokim bipolarresistiveswitchingbehaviorofpvpgqdhfoxitographenehybridflexibleresistiverandomaccessmemory AT sungwonhwang bipolarresistiveswitchingbehaviorofpvpgqdhfoxitographenehybridflexibleresistiverandomaccessmemory
_version_	1718411133375741952

Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory

Ejemplares similares