Correction: Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

Nature Communications 6: Article number: 8948 (2015); Published: 13 November 2015; Updated: 6 June 2016. This Article contains an error in the penultimate sentence of the penultimate paragraph. This sentence should read: ‘In other words, if one would analyse the minimum current level Imin using a si...

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Autores principales:	Ashish V. Penumatcha, Ramon B. Salazar, Joerg Appenzeller
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/5a3411d119354ae592ea4958ef4fcba3
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spelling	oai:doaj.org-article:5a3411d119354ae592ea4958ef4fcba32021-12-02T15:34:55ZCorrection: Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model10.1038/ncomms119132041-1723https://doaj.org/article/5a3411d119354ae592ea4958ef4fcba32016-06-01T00:00:00Zhttps://doi.org/10.1038/ncomms11913https://doaj.org/toc/2041-1723Nature Communications 6: Article number: 8948 (2015); Published: 13 November 2015; Updated: 6 June 2016. This Article contains an error in the penultimate sentence of the penultimate paragraph. This sentence should read: ‘In other words, if one would analyse the minimum current level Imin using a simple parabolic κ(E) WKB approximation, one would extract a much smaller bandgap since Imin is severely underestimated.Ashish V. PenumatchaRamon B. SalazarJoerg AppenzellerNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-1 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Ashish V. Penumatcha Ramon B. Salazar Joerg Appenzeller Correction: Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
description	Nature Communications 6: Article number: 8948 (2015); Published: 13 November 2015; Updated: 6 June 2016. This Article contains an error in the penultimate sentence of the penultimate paragraph. This sentence should read: ‘In other words, if one would analyse the minimum current level Imin using a simple parabolic κ(E) WKB approximation, one would extract a much smaller bandgap since Imin is severely underestimated.
format	article
author	Ashish V. Penumatcha Ramon B. Salazar Joerg Appenzeller
author_facet	Ashish V. Penumatcha Ramon B. Salazar Joerg Appenzeller
author_sort	Ashish V. Penumatcha
title	Correction: Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
title_short	Correction: Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
title_full	Correction: Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
title_fullStr	Correction: Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
title_full_unstemmed	Correction: Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
title_sort	correction: corrigendum: analysing black phosphorus transistors using an analytic schottky barrier mosfet model
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/5a3411d119354ae592ea4958ef4fcba3
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Correction: Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

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