Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays

Abstract In this study, the resistive switching scheme using TiO2 nanorod arrays synthesized by a large-scale and low-cost hydrothermal process was reported. Especially, the nonlinear I–V characteristics of TiO2 nanorod arrays with a nonlinearity of up to ~10, which suppress the leakage current less...

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Autores principales:	Chi-Hsin Huang, Ta-Shun Chou, Jian-Shiou Huang, Shih-Ming Lin, Yu-Lun Chueh
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/5a63eb92e4424ca7bacb68b435efd1fd
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id	oai:doaj.org-article:5a63eb92e4424ca7bacb68b435efd1fd
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spelling	oai:doaj.org-article:5a63eb92e4424ca7bacb68b435efd1fd2021-12-02T11:52:59ZSelf-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays10.1038/s41598-017-01354-72045-2322https://doaj.org/article/5a63eb92e4424ca7bacb68b435efd1fd2017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-01354-7https://doaj.org/toc/2045-2322Abstract In this study, the resistive switching scheme using TiO2 nanorod arrays synthesized by a large-scale and low-cost hydrothermal process was reported. Especially, the nonlinear I–V characteristics of TiO2 nanorod arrays with a nonlinearity of up to ~10, which suppress the leakage current less than 10−4 Acm−2, were demonstrated, exhibiting a self-selecting resistive switching behavior. It provides a simple pathway for integration of RRAM crossbar arrays without additional stacking of active devices. The mechanisms of the nonlinear resistive switching behaviors were discussed in detail. In addition, the maximum array numbers of 79 for self-selecting RRAM cells were estimated. The results demonstrate an opportunity of using the concept of self-selecting resistive switching characteristics in a single material, which offers a new strategy to tackle the sneak path issue of RRAM in the crossbar arrays structure.Chi-Hsin HuangTa-Shun ChouJian-Shiou HuangShih-Ming LinYu-Lun ChuehNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Chi-Hsin Huang Ta-Shun Chou Jian-Shiou Huang Shih-Ming Lin Yu-Lun Chueh Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays
description	Abstract In this study, the resistive switching scheme using TiO2 nanorod arrays synthesized by a large-scale and low-cost hydrothermal process was reported. Especially, the nonlinear I–V characteristics of TiO2 nanorod arrays with a nonlinearity of up to ~10, which suppress the leakage current less than 10−4 Acm−2, were demonstrated, exhibiting a self-selecting resistive switching behavior. It provides a simple pathway for integration of RRAM crossbar arrays without additional stacking of active devices. The mechanisms of the nonlinear resistive switching behaviors were discussed in detail. In addition, the maximum array numbers of 79 for self-selecting RRAM cells were estimated. The results demonstrate an opportunity of using the concept of self-selecting resistive switching characteristics in a single material, which offers a new strategy to tackle the sneak path issue of RRAM in the crossbar arrays structure.
format	article
author	Chi-Hsin Huang Ta-Shun Chou Jian-Shiou Huang Shih-Ming Lin Yu-Lun Chueh
author_facet	Chi-Hsin Huang Ta-Shun Chou Jian-Shiou Huang Shih-Ming Lin Yu-Lun Chueh
author_sort	Chi-Hsin Huang
title	Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays
title_short	Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays
title_full	Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays
title_fullStr	Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays
title_full_unstemmed	Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays
title_sort	self-selecting resistive switching scheme using tio2 nanorod arrays
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/5a63eb92e4424ca7bacb68b435efd1fd
work_keys_str_mv	AT chihsinhuang selfselectingresistiveswitchingschemeusingtio2nanorodarrays AT tashunchou selfselectingresistiveswitchingschemeusingtio2nanorodarrays AT jianshiouhuang selfselectingresistiveswitchingschemeusingtio2nanorodarrays AT shihminglin selfselectingresistiveswitchingschemeusingtio2nanorodarrays AT yulunchueh selfselectingresistiveswitchingschemeusingtio2nanorodarrays
_version_	1718394924420825088

Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays

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