Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction

Photodetectors based on 2D transition metal dichalcogenides exhibit ever increasingly competitive performance, yet not superior to that of alternative technologies. Here, the authors devise a MoS2-based phototransistor with an out-of-plane junction, yielding a record detectivity combined with broadb...

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Autores principales: Nengjie Huo, Gerasimos Konstantatos
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/5aac235eeb344f21b400fb990be7af6d
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spelling oai:doaj.org-article:5aac235eeb344f21b400fb990be7af6d2021-12-02T14:42:39ZUltrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction10.1038/s41467-017-00722-12041-1723https://doaj.org/article/5aac235eeb344f21b400fb990be7af6d2017-09-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-00722-1https://doaj.org/toc/2041-1723Photodetectors based on 2D transition metal dichalcogenides exhibit ever increasingly competitive performance, yet not superior to that of alternative technologies. Here, the authors devise a MoS2-based phototransistor with an out-of-plane junction, yielding a record detectivity combined with broadband response.Nengjie HuoGerasimos KonstantatosNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-6 (2017)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Nengjie Huo
Gerasimos Konstantatos
Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction
description Photodetectors based on 2D transition metal dichalcogenides exhibit ever increasingly competitive performance, yet not superior to that of alternative technologies. Here, the authors devise a MoS2-based phototransistor with an out-of-plane junction, yielding a record detectivity combined with broadband response.
format article
author Nengjie Huo
Gerasimos Konstantatos
author_facet Nengjie Huo
Gerasimos Konstantatos
author_sort Nengjie Huo
title Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction
title_short Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction
title_full Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction
title_fullStr Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction
title_full_unstemmed Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction
title_sort ultrasensitive all-2d mos2 phototransistors enabled by an out-of-plane mos2 pn homojunction
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/5aac235eeb344f21b400fb990be7af6d
work_keys_str_mv AT nengjiehuo ultrasensitiveall2dmos2phototransistorsenabledbyanoutofplanemos2pnhomojunction
AT gerasimoskonstantatos ultrasensitiveall2dmos2phototransistorsenabledbyanoutofplanemos2pnhomojunction
_version_ 1718389630217224192