Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction
Photodetectors based on 2D transition metal dichalcogenides exhibit ever increasingly competitive performance, yet not superior to that of alternative technologies. Here, the authors devise a MoS2-based phototransistor with an out-of-plane junction, yielding a record detectivity combined with broadb...
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| Auteurs principaux: | , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2017
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/5aac235eeb344f21b400fb990be7af6d |
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