Numerical Investigation of the Effects of the Beam Scanning Pattern and Overlap on the Temperature Distribution during the Laser Dopant Activation Anneal Process

Laser thermal annealing (LTA) has played an important role in the fabrication of scaled semiconductor devices by reducing the heat budget of the dopant activation process. During the laser annealing of entire wafer areas, the beam scanning pattern and overlap ratio have significant effects on unifor...

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Autores principales: Donghyeok Choi, Joonghan Shin
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Lenguaje:EN
Publicado: MDPI AG 2021
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spelling oai:doaj.org-article:5b5d3dcaab2a441385b4956202fd6e752021-11-25T16:37:17ZNumerical Investigation of the Effects of the Beam Scanning Pattern and Overlap on the Temperature Distribution during the Laser Dopant Activation Anneal Process10.3390/app1122107482076-3417https://doaj.org/article/5b5d3dcaab2a441385b4956202fd6e752021-11-01T00:00:00Zhttps://www.mdpi.com/2076-3417/11/22/10748https://doaj.org/toc/2076-3417Laser thermal annealing (LTA) has played an important role in the fabrication of scaled semiconductor devices by reducing the heat budget of the dopant activation process. During the laser annealing of entire wafer areas, the beam scanning pattern and overlap ratio have significant effects on uniform heating during the process. In this study, a numerical simulation of the LTA process was carried out using a three-dimensional transient heat transfer model. The temperature distribution produced by different laser scan paths and beam overlap ratios was analyzed. Additionally, the behavior of the dopant (phosphorus) diffusion induced under the multipath and beam overlapping conditions was numerically investigated. According to the simulation result, a zig-zag pattern generated hot spots around the corner areas of the beam path due to the greater heat accumulation per unit area; however, a bidirectional pattern induced cold spots due to the absence of laser heating around the corner areas. It was also found that the maximum temperature reachable in the beam overlapped region was much lower than that obtained along the beam scanning path, and the most uniform heating could be obtained when the zig-zag pattern and a 50% overlap ratio were used. According to the dopant diffusion and concentration distribution predicted for the case of the zig-zag pattern and 50% overlap ratio, the difference in the dopant diffusion length was approximately thirty times within the scanned area.Donghyeok ChoiJoonghan ShinMDPI AGarticlelaser thermal annealing (LTA)numerical simulationdopant activationtemperature distributionmultipathbeam overlapTechnologyTEngineering (General). Civil engineering (General)TA1-2040Biology (General)QH301-705.5PhysicsQC1-999ChemistryQD1-999ENApplied Sciences, Vol 11, Iss 10748, p 10748 (2021)
institution DOAJ
collection DOAJ
language EN
topic laser thermal annealing (LTA)
numerical simulation
dopant activation
temperature distribution
multipath
beam overlap
Technology
T
Engineering (General). Civil engineering (General)
TA1-2040
Biology (General)
QH301-705.5
Physics
QC1-999
Chemistry
QD1-999
spellingShingle laser thermal annealing (LTA)
numerical simulation
dopant activation
temperature distribution
multipath
beam overlap
Technology
T
Engineering (General). Civil engineering (General)
TA1-2040
Biology (General)
QH301-705.5
Physics
QC1-999
Chemistry
QD1-999
Donghyeok Choi
Joonghan Shin
Numerical Investigation of the Effects of the Beam Scanning Pattern and Overlap on the Temperature Distribution during the Laser Dopant Activation Anneal Process
description Laser thermal annealing (LTA) has played an important role in the fabrication of scaled semiconductor devices by reducing the heat budget of the dopant activation process. During the laser annealing of entire wafer areas, the beam scanning pattern and overlap ratio have significant effects on uniform heating during the process. In this study, a numerical simulation of the LTA process was carried out using a three-dimensional transient heat transfer model. The temperature distribution produced by different laser scan paths and beam overlap ratios was analyzed. Additionally, the behavior of the dopant (phosphorus) diffusion induced under the multipath and beam overlapping conditions was numerically investigated. According to the simulation result, a zig-zag pattern generated hot spots around the corner areas of the beam path due to the greater heat accumulation per unit area; however, a bidirectional pattern induced cold spots due to the absence of laser heating around the corner areas. It was also found that the maximum temperature reachable in the beam overlapped region was much lower than that obtained along the beam scanning path, and the most uniform heating could be obtained when the zig-zag pattern and a 50% overlap ratio were used. According to the dopant diffusion and concentration distribution predicted for the case of the zig-zag pattern and 50% overlap ratio, the difference in the dopant diffusion length was approximately thirty times within the scanned area.
format article
author Donghyeok Choi
Joonghan Shin
author_facet Donghyeok Choi
Joonghan Shin
author_sort Donghyeok Choi
title Numerical Investigation of the Effects of the Beam Scanning Pattern and Overlap on the Temperature Distribution during the Laser Dopant Activation Anneal Process
title_short Numerical Investigation of the Effects of the Beam Scanning Pattern and Overlap on the Temperature Distribution during the Laser Dopant Activation Anneal Process
title_full Numerical Investigation of the Effects of the Beam Scanning Pattern and Overlap on the Temperature Distribution during the Laser Dopant Activation Anneal Process
title_fullStr Numerical Investigation of the Effects of the Beam Scanning Pattern and Overlap on the Temperature Distribution during the Laser Dopant Activation Anneal Process
title_full_unstemmed Numerical Investigation of the Effects of the Beam Scanning Pattern and Overlap on the Temperature Distribution during the Laser Dopant Activation Anneal Process
title_sort numerical investigation of the effects of the beam scanning pattern and overlap on the temperature distribution during the laser dopant activation anneal process
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/5b5d3dcaab2a441385b4956202fd6e75
work_keys_str_mv AT donghyeokchoi numericalinvestigationoftheeffectsofthebeamscanningpatternandoverlaponthetemperaturedistributionduringthelaserdopantactivationannealprocess
AT joonghanshin numericalinvestigationoftheeffectsofthebeamscanningpatternandoverlaponthetemperaturedistributionduringthelaserdopantactivationannealprocess
_version_ 1718413077396848640