Numerical Investigation of the Effects of the Beam Scanning Pattern and Overlap on the Temperature Distribution during the Laser Dopant Activation Anneal Process
Laser thermal annealing (LTA) has played an important role in the fabrication of scaled semiconductor devices by reducing the heat budget of the dopant activation process. During the laser annealing of entire wafer areas, the beam scanning pattern and overlap ratio have significant effects on unifor...
Guardado en:
| Autores principales: | , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/5b5d3dcaab2a441385b4956202fd6e75 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|