Interfacial chemical bonding-mediated ionic resistive switching

Abstract In this paper, we present a unique resistive switching (RS) mechanism study of Pt/TiO2/Pt cell, one of the most widely studied RS system, by focusing on the role of interfacial bonding at the active TiO2–Pt interface, as opposed to a physico-chemical change within the RS film. This study wa...

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Autores principales: Hyeongjoo Moon, Vishal Zade, Hung-Sen Kang, Jin-Woo Han, Eunseok Lee, Cheol Seong Hwang, Min Hwan Lee
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Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/5b8c25f9322543d2907589cd47a7ba4a
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spelling oai:doaj.org-article:5b8c25f9322543d2907589cd47a7ba4a2021-12-02T11:52:34ZInterfacial chemical bonding-mediated ionic resistive switching10.1038/s41598-017-01493-x2045-2322https://doaj.org/article/5b8c25f9322543d2907589cd47a7ba4a2017-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-01493-xhttps://doaj.org/toc/2045-2322Abstract In this paper, we present a unique resistive switching (RS) mechanism study of Pt/TiO2/Pt cell, one of the most widely studied RS system, by focusing on the role of interfacial bonding at the active TiO2–Pt interface, as opposed to a physico-chemical change within the RS film. This study was enabled by the use of a non-conventional scanning probe-based setup. The nanoscale cell is formed by bringing a Pt/TiO2-coated atomic force microscope tip into contact with a flat substrate coated with Pt. The study reveals that electrical resistance and interfacial bonding status are highly coupled together. An oxygen-mediated chemical bonding at the active interface between TiO2 and Pt is a necessary condition for a non-polar low-resistance state, and a reset switching process disconnects the chemical bonding. Bipolar switching mode did not involve the chemical bonding. The nature of chemical bonding at the TiO2-metal interface is further studied by density functional theory calculations.Hyeongjoo MoonVishal ZadeHung-Sen KangJin-Woo HanEunseok LeeCheol Seong HwangMin Hwan LeeNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Hyeongjoo Moon
Vishal Zade
Hung-Sen Kang
Jin-Woo Han
Eunseok Lee
Cheol Seong Hwang
Min Hwan Lee
Interfacial chemical bonding-mediated ionic resistive switching
description Abstract In this paper, we present a unique resistive switching (RS) mechanism study of Pt/TiO2/Pt cell, one of the most widely studied RS system, by focusing on the role of interfacial bonding at the active TiO2–Pt interface, as opposed to a physico-chemical change within the RS film. This study was enabled by the use of a non-conventional scanning probe-based setup. The nanoscale cell is formed by bringing a Pt/TiO2-coated atomic force microscope tip into contact with a flat substrate coated with Pt. The study reveals that electrical resistance and interfacial bonding status are highly coupled together. An oxygen-mediated chemical bonding at the active interface between TiO2 and Pt is a necessary condition for a non-polar low-resistance state, and a reset switching process disconnects the chemical bonding. Bipolar switching mode did not involve the chemical bonding. The nature of chemical bonding at the TiO2-metal interface is further studied by density functional theory calculations.
format article
author Hyeongjoo Moon
Vishal Zade
Hung-Sen Kang
Jin-Woo Han
Eunseok Lee
Cheol Seong Hwang
Min Hwan Lee
author_facet Hyeongjoo Moon
Vishal Zade
Hung-Sen Kang
Jin-Woo Han
Eunseok Lee
Cheol Seong Hwang
Min Hwan Lee
author_sort Hyeongjoo Moon
title Interfacial chemical bonding-mediated ionic resistive switching
title_short Interfacial chemical bonding-mediated ionic resistive switching
title_full Interfacial chemical bonding-mediated ionic resistive switching
title_fullStr Interfacial chemical bonding-mediated ionic resistive switching
title_full_unstemmed Interfacial chemical bonding-mediated ionic resistive switching
title_sort interfacial chemical bonding-mediated ionic resistive switching
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/5b8c25f9322543d2907589cd47a7ba4a
work_keys_str_mv AT hyeongjoomoon interfacialchemicalbondingmediatedionicresistiveswitching
AT vishalzade interfacialchemicalbondingmediatedionicresistiveswitching
AT hungsenkang interfacialchemicalbondingmediatedionicresistiveswitching
AT jinwoohan interfacialchemicalbondingmediatedionicresistiveswitching
AT eunseoklee interfacialchemicalbondingmediatedionicresistiveswitching
AT cheolseonghwang interfacialchemicalbondingmediatedionicresistiveswitching
AT minhwanlee interfacialchemicalbondingmediatedionicresistiveswitching
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