Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate

Abstract Lateral superlattices in 2D materials provide a powerful platform for exploring intriguing quantum phenomena, which can be realized through the proximity coupling in forming moiré pattern with another layer. This approach, however, is invasive, material-specific, and requires small lattice...

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Autores principales:	Pei Zhao, Chengxin Xiao, Wang Yao
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/5b921719b1a24412b01396e58ac6a7b2
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spelling	oai:doaj.org-article:5b921719b1a24412b01396e58ac6a7b22021-12-02T14:30:25ZUniversal superlattice potential for 2D materials from twisted interface inside h-BN substrate10.1038/s41699-021-00221-42397-7132https://doaj.org/article/5b921719b1a24412b01396e58ac6a7b22021-04-01T00:00:00Zhttps://doi.org/10.1038/s41699-021-00221-4https://doaj.org/toc/2397-7132Abstract Lateral superlattices in 2D materials provide a powerful platform for exploring intriguing quantum phenomena, which can be realized through the proximity coupling in forming moiré pattern with another layer. This approach, however, is invasive, material-specific, and requires small lattice mismatch and suitable band alignment, largely limited to graphene and transition metal dichalcogenides (TMDs). Hexagonal boron nitride (h-BN) of antiparallel (AA′) stacking has been an indispensable building block, as dielectric substrates and capping layers for realizing high-quality van der Waals devices. There is also emerging interest on parallelly aligned h-BN of Bernal (AB) stacking, where the broken inversion and mirror symmetries lead to out-of-plane electrical polarization. Here we show the that laterally patterned electrical polarization at a nearly parallel interface within the h-BN substrate can be exploited to create noninvasively a universal superlattice potential in general 2D materials. The feasibility is demonstrated by first principle calculations for monolayer MoSe2, black phosphorus, and antiferromagnetic MnPSe3 on such h-BN. The potential strength can reach 200 meV, customizable in this range through choice of distance of target material from the interface in h-BN. We also find sizable out-of-plane electric field at the h-BN surface, which can realize superlattice potential for interlayer excitons in TMD bilayers as well as dipolar molecules. The idea is further generalized to AB-stacked h-BN subject to torsion with adjacent layers all twisted with an angle, which allows the potential and field strength to be scaled up with film thickness, saturating to a quasi-periodic one with chiral structure.Pei ZhaoChengxin XiaoWang YaoNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Pei Zhao Chengxin Xiao Wang Yao Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate
description	Abstract Lateral superlattices in 2D materials provide a powerful platform for exploring intriguing quantum phenomena, which can be realized through the proximity coupling in forming moiré pattern with another layer. This approach, however, is invasive, material-specific, and requires small lattice mismatch and suitable band alignment, largely limited to graphene and transition metal dichalcogenides (TMDs). Hexagonal boron nitride (h-BN) of antiparallel (AA′) stacking has been an indispensable building block, as dielectric substrates and capping layers for realizing high-quality van der Waals devices. There is also emerging interest on parallelly aligned h-BN of Bernal (AB) stacking, where the broken inversion and mirror symmetries lead to out-of-plane electrical polarization. Here we show the that laterally patterned electrical polarization at a nearly parallel interface within the h-BN substrate can be exploited to create noninvasively a universal superlattice potential in general 2D materials. The feasibility is demonstrated by first principle calculations for monolayer MoSe2, black phosphorus, and antiferromagnetic MnPSe3 on such h-BN. The potential strength can reach 200 meV, customizable in this range through choice of distance of target material from the interface in h-BN. We also find sizable out-of-plane electric field at the h-BN surface, which can realize superlattice potential for interlayer excitons in TMD bilayers as well as dipolar molecules. The idea is further generalized to AB-stacked h-BN subject to torsion with adjacent layers all twisted with an angle, which allows the potential and field strength to be scaled up with film thickness, saturating to a quasi-periodic one with chiral structure.
format	article
author	Pei Zhao Chengxin Xiao Wang Yao
author_facet	Pei Zhao Chengxin Xiao Wang Yao
author_sort	Pei Zhao
title	Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate
title_short	Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate
title_full	Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate
title_fullStr	Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate
title_full_unstemmed	Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate
title_sort	universal superlattice potential for 2d materials from twisted interface inside h-bn substrate
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/5b921719b1a24412b01396e58ac6a7b2
work_keys_str_mv	AT peizhao universalsuperlatticepotentialfor2dmaterialsfromtwistedinterfaceinsidehbnsubstrate AT chengxinxiao universalsuperlatticepotentialfor2dmaterialsfromtwistedinterfaceinsidehbnsubstrate AT wangyao universalsuperlatticepotentialfor2dmaterialsfromtwistedinterfaceinsidehbnsubstrate
_version_	1718391192163450880

Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate

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