On the feasibility of hearing electrons in a 1D device through emitted phonons

Abstract This work investigates the vibrational power that may potentially be delivered by electron-emitted phonons at the terminals of a device with a 1D material as the active channel. Electrons in a 1D material traversing a device excite phase-limited acoustic and optical phonon modes as they und...

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Autores principales:	Amit Verma, Reza Nekovei, Zahed Kauser
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/5c94ecb3aaca4d7fad75ebbc2f2c1a65
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spelling	oai:doaj.org-article:5c94ecb3aaca4d7fad75ebbc2f2c1a652021-12-02T13:30:51ZOn the feasibility of hearing electrons in a 1D device through emitted phonons10.1038/s41598-021-85059-y2045-2322https://doaj.org/article/5c94ecb3aaca4d7fad75ebbc2f2c1a652021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-85059-yhttps://doaj.org/toc/2045-2322Abstract This work investigates the vibrational power that may potentially be delivered by electron-emitted phonons at the terminals of a device with a 1D material as the active channel. Electrons in a 1D material traversing a device excite phase-limited acoustic and optical phonon modes as they undergo streaming motion. At ultra-low temperature (4 K in this study, for example), in the near absence of background phonon activity, the emitted traveling phonons may potentially be collected at the terminals before they decay. Detecting those phonons is akin to hearing electrons within the device. Results here show that traveling acoustic phonons can deliver up to a fraction of a nW of vibrational power at the terminals, which is within the sensitivity range of modern instruments. The total vibrational power from traveling optical and acoustic phonons is found to be in order of nW. In this work, Ensemble Monte Carlo (EMC) simulations are used to model the behavior of a gate-all-around (GAA) field-effect transistor (FET), with a single-wall semiconducting carbon nanotube (SWCNT) as the active channel, and a free-hanging SWCNT between two contacts. Electronic band structure of the SWCNT is calculated within the framework of a tight-binding (TB) model. The principal scattering mechanisms are due to electron–phonon interactions using 1st order perturbation theory. A continuum model is used to determine the longitudinal acoustic (LA) and optical (LO) phonons, and a single lowest radial breathing mode (RBM) phonon is considered.Amit VermaReza NekoveiZahed KauserNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-6 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Amit Verma Reza Nekovei Zahed Kauser On the feasibility of hearing electrons in a 1D device through emitted phonons
description	Abstract This work investigates the vibrational power that may potentially be delivered by electron-emitted phonons at the terminals of a device with a 1D material as the active channel. Electrons in a 1D material traversing a device excite phase-limited acoustic and optical phonon modes as they undergo streaming motion. At ultra-low temperature (4 K in this study, for example), in the near absence of background phonon activity, the emitted traveling phonons may potentially be collected at the terminals before they decay. Detecting those phonons is akin to hearing electrons within the device. Results here show that traveling acoustic phonons can deliver up to a fraction of a nW of vibrational power at the terminals, which is within the sensitivity range of modern instruments. The total vibrational power from traveling optical and acoustic phonons is found to be in order of nW. In this work, Ensemble Monte Carlo (EMC) simulations are used to model the behavior of a gate-all-around (GAA) field-effect transistor (FET), with a single-wall semiconducting carbon nanotube (SWCNT) as the active channel, and a free-hanging SWCNT between two contacts. Electronic band structure of the SWCNT is calculated within the framework of a tight-binding (TB) model. The principal scattering mechanisms are due to electron–phonon interactions using 1st order perturbation theory. A continuum model is used to determine the longitudinal acoustic (LA) and optical (LO) phonons, and a single lowest radial breathing mode (RBM) phonon is considered.
format	article
author	Amit Verma Reza Nekovei Zahed Kauser
author_facet	Amit Verma Reza Nekovei Zahed Kauser
author_sort	Amit Verma
title	On the feasibility of hearing electrons in a 1D device through emitted phonons
title_short	On the feasibility of hearing electrons in a 1D device through emitted phonons
title_full	On the feasibility of hearing electrons in a 1D device through emitted phonons
title_fullStr	On the feasibility of hearing electrons in a 1D device through emitted phonons
title_full_unstemmed	On the feasibility of hearing electrons in a 1D device through emitted phonons
title_sort	on the feasibility of hearing electrons in a 1d device through emitted phonons
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/5c94ecb3aaca4d7fad75ebbc2f2c1a65
work_keys_str_mv	AT amitverma onthefeasibilityofhearingelectronsina1ddevicethroughemittedphonons AT rezanekovei onthefeasibilityofhearingelectronsina1ddevicethroughemittedphonons AT zahedkauser onthefeasibilityofhearingelectronsina1ddevicethroughemittedphonons
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On the feasibility of hearing electrons in a 1D device through emitted phonons

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