Sub-nanosecond memristor based on ferroelectric tunnel junction

Sub-nanosecond memristor based on ferroelectric tunnel junction

Memristor devices based on ferroelectric tunnel junctions are promising, but suffer from quite slow switching times. Here, the authors report on ultrafast switching times at and above room temperature of 600ps in Ag/BaTiO3/Nb:SrTiO3 based ferroelectric tunnel junctions.

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Autores principales: Chao Ma, Zhen Luo, Weichuan Huang, Letian Zhao, Qiaoling Chen, Yue Lin, Xiang Liu, Zhiwei Chen, Chuanchuan Liu, Haoyang Sun, Xi Jin, Yuewei Yin, Xiaoguang Li
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Science
Q
Acceso en línea:https://doaj.org/article/5cd1c160ef164cdfb4f850e7eb224a9c
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spelling oai:doaj.org-article:5cd1c160ef164cdfb4f850e7eb224a9c2021-12-02T16:49:16ZSub-nanosecond memristor based on ferroelectric tunnel junction10.1038/s41467-020-15249-12041-1723https://doaj.org/article/5cd1c160ef164cdfb4f850e7eb224a9c2020-03-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-15249-1https://doaj.org/toc/2041-1723Memristor devices based on ferroelectric tunnel junctions are promising, but suffer from quite slow switching times. Here, the authors report on ultrafast switching times at and above room temperature of 600ps in Ag/BaTiO3/Nb:SrTiO3 based ferroelectric tunnel junctions.Chao MaZhen LuoWeichuan HuangLetian ZhaoQiaoling ChenYue LinXiang LiuZhiwei ChenChuanchuan LiuHaoyang SunXi JinYuewei YinXiaoguang LiNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Chao Ma
Zhen Luo
Weichuan Huang
Letian Zhao
Qiaoling Chen
Yue Lin
Xiang Liu
Zhiwei Chen
Chuanchuan Liu
Haoyang Sun
Xi Jin
Yuewei Yin
Xiaoguang Li
Sub-nanosecond memristor based on ferroelectric tunnel junction
description Memristor devices based on ferroelectric tunnel junctions are promising, but suffer from quite slow switching times. Here, the authors report on ultrafast switching times at and above room temperature of 600ps in Ag/BaTiO3/Nb:SrTiO3 based ferroelectric tunnel junctions.
format article
author Chao Ma
Zhen Luo
Weichuan Huang
Letian Zhao
Qiaoling Chen
Yue Lin
Xiang Liu
Zhiwei Chen
Chuanchuan Liu
Haoyang Sun
Xi Jin
Yuewei Yin
Xiaoguang Li
author_facet Chao Ma
Zhen Luo
Weichuan Huang
Letian Zhao
Qiaoling Chen
Yue Lin
Xiang Liu
Zhiwei Chen
Chuanchuan Liu
Haoyang Sun
Xi Jin
Yuewei Yin
Xiaoguang Li
author_sort Chao Ma
title Sub-nanosecond memristor based on ferroelectric tunnel junction
title_short Sub-nanosecond memristor based on ferroelectric tunnel junction
title_full Sub-nanosecond memristor based on ferroelectric tunnel junction
title_fullStr Sub-nanosecond memristor based on ferroelectric tunnel junction
title_full_unstemmed Sub-nanosecond memristor based on ferroelectric tunnel junction
title_sort sub-nanosecond memristor based on ferroelectric tunnel junction
publisher Nature Portfolio
publishDate 2020
url https://doaj.org/article/5cd1c160ef164cdfb4f850e7eb224a9c
work_keys_str_mv AT chaoma subnanosecondmemristorbasedonferroelectrictunneljunction
AT zhenluo subnanosecondmemristorbasedonferroelectrictunneljunction
AT weichuanhuang subnanosecondmemristorbasedonferroelectrictunneljunction
AT letianzhao subnanosecondmemristorbasedonferroelectrictunneljunction
AT qiaolingchen subnanosecondmemristorbasedonferroelectrictunneljunction
AT yuelin subnanosecondmemristorbasedonferroelectrictunneljunction
AT xiangliu subnanosecondmemristorbasedonferroelectrictunneljunction
AT zhiweichen subnanosecondmemristorbasedonferroelectrictunneljunction
AT chuanchuanliu subnanosecondmemristorbasedonferroelectrictunneljunction
AT haoyangsun subnanosecondmemristorbasedonferroelectrictunneljunction
AT xijin subnanosecondmemristorbasedonferroelectrictunneljunction
AT yueweiyin subnanosecondmemristorbasedonferroelectrictunneljunction
AT xiaoguangli subnanosecondmemristorbasedonferroelectrictunneljunction
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