Sub-nanosecond memristor based on ferroelectric tunnel junction

Sub-nanosecond memristor based on ferroelectric tunnel junction

Memristor devices based on ferroelectric tunnel junctions are promising, but suffer from quite slow switching times. Here, the authors report on ultrafast switching times at and above room temperature of 600ps in Ag/BaTiO3/Nb:SrTiO3 based ferroelectric tunnel junctions.

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Autores principales: Chao Ma, Zhen Luo, Weichuan Huang, Letian Zhao, Qiaoling Chen, Yue Lin, Xiang Liu, Zhiwei Chen, Chuanchuan Liu, Haoyang Sun, Xi Jin, Yuewei Yin, Xiaoguang Li
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
Materias:
Science
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Acceso en línea:https://doaj.org/article/5cd1c160ef164cdfb4f850e7eb224a9c
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