Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals

One of the key challenges 2D materials still face is their uniform wafer-scale deposition. Here, the authors present a deposition method for post-transition metal dichalcogenides, based on transformation of an ultra-thin oxide layer on the surface of liquid elemental gallium onto an oxide-coated sub...

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Autores principales: Benjamin J. Carey, Jian Zhen Ou, Rhiannon M. Clark, Kyle J. Berean, Ali Zavabeti, Anthony S. R. Chesman, Salvy P. Russo, Desmond W. M. Lau, Zai-Quan Xu, Qiaoliang Bao, Omid Kavehei, Brant C. Gibson, Michael D. Dickey, Richard B. Kaner, Torben Daeneke, Kourosh Kalantar-Zadeh
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/5d020390c450413282da27d3ef5301c4
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Sumario:One of the key challenges 2D materials still face is their uniform wafer-scale deposition. Here, the authors present a deposition method for post-transition metal dichalcogenides, based on transformation of an ultra-thin oxide layer on the surface of liquid elemental gallium onto an oxide-coated substrate.