Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2

The research to utilize chemical potential mismatch for materials synthesis has been limited across the oxide interface. Here, the authors show that directional ionic transport from the VO2 layers stabilizes the rutile TiO2 phase at extremely low temperatures, at which epitaxy is difficult, by effec...

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Autores principales:	Yunkyu Park, Hyeji Sim, Minguk Jo, Gi-Yeop Kim, Daseob Yoon, Hyeon Han, Younghak Kim, Kyung Song, Donghwa Lee, Si-Young Choi, Junwoo Son
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/5d0efa13f77445d4acd4d7bea8eae6f7
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spelling	oai:doaj.org-article:5d0efa13f77445d4acd4d7bea8eae6f72021-12-02T16:56:48ZDirectional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO210.1038/s41467-020-15142-x2041-1723https://doaj.org/article/5d0efa13f77445d4acd4d7bea8eae6f72020-03-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-15142-xhttps://doaj.org/toc/2041-1723The research to utilize chemical potential mismatch for materials synthesis has been limited across the oxide interface. Here, the authors show that directional ionic transport from the VO2 layers stabilizes the rutile TiO2 phase at extremely low temperatures, at which epitaxy is difficult, by effectively lowering the activation barrier for crystallization.Yunkyu ParkHyeji SimMinguk JoGi-Yeop KimDaseob YoonHyeon HanYounghak KimKyung SongDonghwa LeeSi-Young ChoiJunwoo SonNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-10 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Yunkyu Park Hyeji Sim Minguk Jo Gi-Yeop Kim Daseob Yoon Hyeon Han Younghak Kim Kyung Song Donghwa Lee Si-Young Choi Junwoo Son Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2
description	The research to utilize chemical potential mismatch for materials synthesis has been limited across the oxide interface. Here, the authors show that directional ionic transport from the VO2 layers stabilizes the rutile TiO2 phase at extremely low temperatures, at which epitaxy is difficult, by effectively lowering the activation barrier for crystallization.
format	article
author	Yunkyu Park Hyeji Sim Minguk Jo Gi-Yeop Kim Daseob Yoon Hyeon Han Younghak Kim Kyung Song Donghwa Lee Si-Young Choi Junwoo Son
author_facet	Yunkyu Park Hyeji Sim Minguk Jo Gi-Yeop Kim Daseob Yoon Hyeon Han Younghak Kim Kyung Song Donghwa Lee Si-Young Choi Junwoo Son
author_sort	Yunkyu Park
title	Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2
title_short	Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2
title_full	Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2
title_fullStr	Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2
title_full_unstemmed	Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2
title_sort	directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile tio2
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/5d0efa13f77445d4acd4d7bea8eae6f7
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Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2

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