Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer

Abstract This study investigated electron beam laser excitation in the UV region using a GaN/AlGaN multiquantum well (MQW) active layer. Laser emission was observed when the GaN/AlGaN MQW was excited by an electron beam, with a wavelength of approximately 353 nm and a threshold power density of 230 ...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Takafumi Hayashi, Yuta Kawase, Noriaki Nagata, Takashi Senga, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Takahiro Matsumoto
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/5d1a474184ad40c3884eef852916023a
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:5d1a474184ad40c3884eef852916023a
record_format	dspace
spelling	oai:doaj.org-article:5d1a474184ad40c3884eef852916023a2021-12-02T15:05:06ZDemonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer10.1038/s41598-017-03151-82045-2322https://doaj.org/article/5d1a474184ad40c3884eef852916023a2017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-03151-8https://doaj.org/toc/2045-2322Abstract This study investigated electron beam laser excitation in the UV region using a GaN/AlGaN multiquantum well (MQW) active layer. Laser emission was observed when the GaN/AlGaN MQW was excited by an electron beam, with a wavelength of approximately 353 nm and a threshold power density of 230 kW/cm2. A comparison of optical pumping and electron beam pumping demonstrated that the rate of generation of electron-hole pairs when using electron beam excitation was approximately one quarter that of light excitation.Takafumi HayashiYuta KawaseNoriaki NagataTakashi SengaSho IwayamaMotoaki IwayaTetsuya TakeuchiSatoshi KamiyamaIsamu AkasakiTakahiro MatsumotoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-5 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Takafumi Hayashi Yuta Kawase Noriaki Nagata Takashi Senga Sho Iwayama Motoaki Iwaya Tetsuya Takeuchi Satoshi Kamiyama Isamu Akasaki Takahiro Matsumoto Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer
description	Abstract This study investigated electron beam laser excitation in the UV region using a GaN/AlGaN multiquantum well (MQW) active layer. Laser emission was observed when the GaN/AlGaN MQW was excited by an electron beam, with a wavelength of approximately 353 nm and a threshold power density of 230 kW/cm2. A comparison of optical pumping and electron beam pumping demonstrated that the rate of generation of electron-hole pairs when using electron beam excitation was approximately one quarter that of light excitation.
format	article
author	Takafumi Hayashi Yuta Kawase Noriaki Nagata Takashi Senga Sho Iwayama Motoaki Iwaya Tetsuya Takeuchi Satoshi Kamiyama Isamu Akasaki Takahiro Matsumoto
author_facet	Takafumi Hayashi Yuta Kawase Noriaki Nagata Takashi Senga Sho Iwayama Motoaki Iwaya Tetsuya Takeuchi Satoshi Kamiyama Isamu Akasaki Takahiro Matsumoto
author_sort	Takafumi Hayashi
title	Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer
title_short	Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer
title_full	Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer
title_fullStr	Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer
title_full_unstemmed	Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer
title_sort	demonstration of electron beam laser excitation in the uv range using a gan/algan multiquantum well active layer
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/5d1a474184ad40c3884eef852916023a
work_keys_str_mv	AT takafumihayashi demonstrationofelectronbeamlaserexcitationintheuvrangeusingaganalganmultiquantumwellactivelayer AT yutakawase demonstrationofelectronbeamlaserexcitationintheuvrangeusingaganalganmultiquantumwellactivelayer AT noriakinagata demonstrationofelectronbeamlaserexcitationintheuvrangeusingaganalganmultiquantumwellactivelayer AT takashisenga demonstrationofelectronbeamlaserexcitationintheuvrangeusingaganalganmultiquantumwellactivelayer AT shoiwayama demonstrationofelectronbeamlaserexcitationintheuvrangeusingaganalganmultiquantumwellactivelayer AT motoakiiwaya demonstrationofelectronbeamlaserexcitationintheuvrangeusingaganalganmultiquantumwellactivelayer AT tetsuyatakeuchi demonstrationofelectronbeamlaserexcitationintheuvrangeusingaganalganmultiquantumwellactivelayer AT satoshikamiyama demonstrationofelectronbeamlaserexcitationintheuvrangeusingaganalganmultiquantumwellactivelayer AT isamuakasaki demonstrationofelectronbeamlaserexcitationintheuvrangeusingaganalganmultiquantumwellactivelayer AT takahiromatsumoto demonstrationofelectronbeamlaserexcitationintheuvrangeusingaganalganmultiquantumwellactivelayer
_version_	1718388957779066880

Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer

Ejemplares similares