Origin of perpendicular magnetic anisotropy in amorphous thin films

Abstract The emergence of perpendicular magnetic anisotropy (PMA) in amorphous thin films, which eventually transforms the magnetic spins form an in-plane to the out-of-plane configuration, also known as a spin-reorientation transition (SRT), is a fundamental roadblock to attain the high flux concen...

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Autores principales:	Daniel Lordan, Guannan Wei, Paul McCloskey, Cian O’Mathuna, Ansar Masood
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/5d8c7a684d40411b8f23f4d88d09c371
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spelling	oai:doaj.org-article:5d8c7a684d40411b8f23f4d88d09c3712021-12-02T14:11:32ZOrigin of perpendicular magnetic anisotropy in amorphous thin films10.1038/s41598-020-78950-72045-2322https://doaj.org/article/5d8c7a684d40411b8f23f4d88d09c3712021-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-78950-7https://doaj.org/toc/2045-2322Abstract The emergence of perpendicular magnetic anisotropy (PMA) in amorphous thin films, which eventually transforms the magnetic spins form an in-plane to the out-of-plane configuration, also known as a spin-reorientation transition (SRT), is a fundamental roadblock to attain the high flux concentration advantage of these functional materials for broadband applications. The present work is focused on unfolding the origin of PMA in amorphous thin films deposited by magnetron sputtering. The amorphous films were deposited under a broad range of sputtering pressure (1.6–6.2 mTorr), and its effect on the thin film growth mechanisms was correlated to the static global magnetic behaviours, magnetic domain structure, and dynamic magnetic performance. The films deposited under low-pressure revealed a dominant in-plane uniaxial anisotropy along with an emerging, however feeble, perpendicular component, which eventually evolved as a dominant PMA when deposited under high-pressure sputtering. This change in the nature of anisotropy redefined the orientation of spins from in-plane to out-of-plane. The SRT in amorphous films was attributed to the dramatic change in the growth mechanism of disorder atomic structure from a homogeneously dispersed to a porous columnar microstructure. We suggest the origin of PMA is associated with the columnar growth of the amorphous films, which can be eluded by a careful selection of a deposition pressure regime to avoid its detrimental effect on the soft magnetic performance. To the author’s best knowledge, no such report links the sputtering pressure as a governing mechanism of perpendicular magnetisation in technologically important amorphous thin films.Daniel LordanGuannan WeiPaul McCloskeyCian O’MathunaAnsar MasoodNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Daniel Lordan Guannan Wei Paul McCloskey Cian O’Mathuna Ansar Masood Origin of perpendicular magnetic anisotropy in amorphous thin films
description	Abstract The emergence of perpendicular magnetic anisotropy (PMA) in amorphous thin films, which eventually transforms the magnetic spins form an in-plane to the out-of-plane configuration, also known as a spin-reorientation transition (SRT), is a fundamental roadblock to attain the high flux concentration advantage of these functional materials for broadband applications. The present work is focused on unfolding the origin of PMA in amorphous thin films deposited by magnetron sputtering. The amorphous films were deposited under a broad range of sputtering pressure (1.6–6.2 mTorr), and its effect on the thin film growth mechanisms was correlated to the static global magnetic behaviours, magnetic domain structure, and dynamic magnetic performance. The films deposited under low-pressure revealed a dominant in-plane uniaxial anisotropy along with an emerging, however feeble, perpendicular component, which eventually evolved as a dominant PMA when deposited under high-pressure sputtering. This change in the nature of anisotropy redefined the orientation of spins from in-plane to out-of-plane. The SRT in amorphous films was attributed to the dramatic change in the growth mechanism of disorder atomic structure from a homogeneously dispersed to a porous columnar microstructure. We suggest the origin of PMA is associated with the columnar growth of the amorphous films, which can be eluded by a careful selection of a deposition pressure regime to avoid its detrimental effect on the soft magnetic performance. To the author’s best knowledge, no such report links the sputtering pressure as a governing mechanism of perpendicular magnetisation in technologically important amorphous thin films.
format	article
author	Daniel Lordan Guannan Wei Paul McCloskey Cian O’Mathuna Ansar Masood
author_facet	Daniel Lordan Guannan Wei Paul McCloskey Cian O’Mathuna Ansar Masood
author_sort	Daniel Lordan
title	Origin of perpendicular magnetic anisotropy in amorphous thin films
title_short	Origin of perpendicular magnetic anisotropy in amorphous thin films
title_full	Origin of perpendicular magnetic anisotropy in amorphous thin films
title_fullStr	Origin of perpendicular magnetic anisotropy in amorphous thin films
title_full_unstemmed	Origin of perpendicular magnetic anisotropy in amorphous thin films
title_sort	origin of perpendicular magnetic anisotropy in amorphous thin films
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/5d8c7a684d40411b8f23f4d88d09c371
work_keys_str_mv	AT daniellordan originofperpendicularmagneticanisotropyinamorphousthinfilms AT guannanwei originofperpendicularmagneticanisotropyinamorphousthinfilms AT paulmccloskey originofperpendicularmagneticanisotropyinamorphousthinfilms AT cianomathuna originofperpendicularmagneticanisotropyinamorphousthinfilms AT ansarmasood originofperpendicularmagneticanisotropyinamorphousthinfilms
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Origin of perpendicular magnetic anisotropy in amorphous thin films

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