Preparing local strain patterns in graphene by atomic force microscope based indentation

Abstract Patterning graphene into various mesoscopic devices such as nanoribbons, quantum dots, etc. by lithographic techniques has enabled the guiding and manipulation of graphene’s Dirac-type charge carriers. Graphene, with well-defined strain patterns, holds promise of similarly rich physics whil...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Péter Nemes-Incze, Gergő Kukucska, János Koltai, Jenő Kürti, Chanyong Hwang, Levente Tapasztó, László P. Biró
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
R
Q
Acceso en línea:https://doaj.org/article/5dc24593081e4c109c72923f9de242d3
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!