Possible electric field induced indirect to direct band gap transition in MoSe2

Abstract Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX2 (M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more pract...

Description complète

Enregistré dans:

Détails bibliographiques
Auteurs principaux:	B. S. Kim, W. S. Kyung, J. J. Seo, J. Y. Kwon, J. D. Denlinger, C. Kim, S. R. Park
Format:	article
Langue:	EN
Publié:	Nature Portfolio 2017
Sujets:	Medicine R Science Q
Accès en ligne:	https://doaj.org/article/5e08233ff8c447fb940e50c824085de0
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

id	oai:doaj.org-article:5e08233ff8c447fb940e50c824085de0
record_format	dspace
spelling	oai:doaj.org-article:5e08233ff8c447fb940e50c824085de02021-12-02T12:31:58ZPossible electric field induced indirect to direct band gap transition in MoSe210.1038/s41598-017-05613-52045-2322https://doaj.org/article/5e08233ff8c447fb940e50c824085de02017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05613-5https://doaj.org/toc/2045-2322Abstract Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX2 (M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more practically usable bulk and multilayer MX2 have indirect-gaps. It is thus highly desired to turn bulk and multilayer MX2 into direct band-gap semiconductors by controlling external parameters. Here, we report angle-resolved photoemission spectroscopy (ARPES) results from Rb dosed MoSe2 that suggest possibility for electric field induced indirect to direct band-gap transition in bulk MoSe2. The Rb concentration dependent data show detailed evolution of the band-gap, approaching a direct band-gap state. As ionized Rb layer on the surface provides a strong electric field perpendicular to the surface within a few surface layers of MoSe2, our data suggest that direct band-gap in MoSe2 can be achieved if a strong electric field is applied, which is a step towards optoelectronic application of bulk materials.B. S. KimW. S. KyungJ. J. SeoJ. Y. KwonJ. D. DenlingerC. KimS. R. ParkNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q B. S. Kim W. S. Kyung J. J. Seo J. Y. Kwon J. D. Denlinger C. Kim S. R. Park Possible electric field induced indirect to direct band gap transition in MoSe2
description	Abstract Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX2 (M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more practically usable bulk and multilayer MX2 have indirect-gaps. It is thus highly desired to turn bulk and multilayer MX2 into direct band-gap semiconductors by controlling external parameters. Here, we report angle-resolved photoemission spectroscopy (ARPES) results from Rb dosed MoSe2 that suggest possibility for electric field induced indirect to direct band-gap transition in bulk MoSe2. The Rb concentration dependent data show detailed evolution of the band-gap, approaching a direct band-gap state. As ionized Rb layer on the surface provides a strong electric field perpendicular to the surface within a few surface layers of MoSe2, our data suggest that direct band-gap in MoSe2 can be achieved if a strong electric field is applied, which is a step towards optoelectronic application of bulk materials.
format	article
author	B. S. Kim W. S. Kyung J. J. Seo J. Y. Kwon J. D. Denlinger C. Kim S. R. Park
author_facet	B. S. Kim W. S. Kyung J. J. Seo J. Y. Kwon J. D. Denlinger C. Kim S. R. Park
author_sort	B. S. Kim
title	Possible electric field induced indirect to direct band gap transition in MoSe2
title_short	Possible electric field induced indirect to direct band gap transition in MoSe2
title_full	Possible electric field induced indirect to direct band gap transition in MoSe2
title_fullStr	Possible electric field induced indirect to direct band gap transition in MoSe2
title_full_unstemmed	Possible electric field induced indirect to direct band gap transition in MoSe2
title_sort	possible electric field induced indirect to direct band gap transition in mose2
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/5e08233ff8c447fb940e50c824085de0
work_keys_str_mv	AT bskim possibleelectricfieldinducedindirecttodirectbandgaptransitioninmose2 AT wskyung possibleelectricfieldinducedindirecttodirectbandgaptransitioninmose2 AT jjseo possibleelectricfieldinducedindirecttodirectbandgaptransitioninmose2 AT jykwon possibleelectricfieldinducedindirecttodirectbandgaptransitioninmose2 AT jddenlinger possibleelectricfieldinducedindirecttodirectbandgaptransitioninmose2 AT ckim possibleelectricfieldinducedindirecttodirectbandgaptransitioninmose2 AT srpark possibleelectricfieldinducedindirecttodirectbandgaptransitioninmose2
_version_	1718394216542896128

Possible electric field induced indirect to direct band gap transition in MoSe2

Documents similaires