Possible electric field induced indirect to direct band gap transition in MoSe2

Possible electric field induced indirect to direct band gap transition in MoSe2

Abstract Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX2 (M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more pract...

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Autores principales: B. S. Kim, W. S. Kyung, J. J. Seo, J. Y. Kwon, J. D. Denlinger, C. Kim, S. R. Park
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/5e08233ff8c447fb940e50c824085de0
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