Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer

SiC wafers, due to their hardness and brittleness, suffer from a low feed rate and a high failure rate during the dicing process. In this study, a novel dual laser beam asynchronous dicing method (DBAD) is proposed to improve the cutting quality of SiC wafers, where a pulsed laser is firstly used to...

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Autores principales:	Zhe Zhang, Zhidong Wen, Haiyan Shi, Qi Song, Ziye Xu, Man Li, Yu Hou, Zichen Zhang
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	silicon carbide wafer dicing stealth dicing laser thermal separation dry processing laser processing Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/5e1b2f6864fd48049b59a688553a88ab
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spelling	oai:doaj.org-article:5e1b2f6864fd48049b59a688553a88ab2021-11-25T18:23:11ZDual Laser Beam Asynchronous Dicing of 4H-SiC Wafer10.3390/mi121113312072-666Xhttps://doaj.org/article/5e1b2f6864fd48049b59a688553a88ab2021-10-01T00:00:00Zhttps://www.mdpi.com/2072-666X/12/11/1331https://doaj.org/toc/2072-666XSiC wafers, due to their hardness and brittleness, suffer from a low feed rate and a high failure rate during the dicing process. In this study, a novel dual laser beam asynchronous dicing method (DBAD) is proposed to improve the cutting quality of SiC wafers, where a pulsed laser is firstly used to introduce several layers of micro-cracks inside the wafer, along the designed dicing line, then a continuous wave (CW) laser is used to generate thermal stress around cracks, and, finally, the wafer is separated. A finite-element (FE) model was applied to analyze the behavior of CW laser heating and the evolution of the thermal stress field. Through experiments, SiC samples, with a thickness of 200 μm, were cut and analyzed, and the effect of the changing of continuous laser power on the DBAD system was also studied. According to the simulation and experiment results, the effectiveness of the DBAD method is certified. There is no more edge breakage because of the absence of the mechanical breaking process compared with traditional stealth dicing. The novel method can be adapted to the cutting of hard-brittle materials. Specifically for materials thinner than 200 μm, the breaking process in the traditional SiC dicing process can be omitted. It is indicated that the dual laser beam asynchronous dicing method has a great engineering potential for future SiC wafer dicing applications.Zhe ZhangZhidong WenHaiyan ShiQi SongZiye XuMan LiYu HouZichen ZhangMDPI AGarticlesilicon carbidewafer dicingstealth dicinglaser thermal separationdry processinglaser processingMechanical engineering and machineryTJ1-1570ENMicromachines, Vol 12, Iss 1331, p 1331 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	silicon carbide wafer dicing stealth dicing laser thermal separation dry processing laser processing Mechanical engineering and machinery TJ1-1570
spellingShingle	silicon carbide wafer dicing stealth dicing laser thermal separation dry processing laser processing Mechanical engineering and machinery TJ1-1570 Zhe Zhang Zhidong Wen Haiyan Shi Qi Song Ziye Xu Man Li Yu Hou Zichen Zhang Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer
description	SiC wafers, due to their hardness and brittleness, suffer from a low feed rate and a high failure rate during the dicing process. In this study, a novel dual laser beam asynchronous dicing method (DBAD) is proposed to improve the cutting quality of SiC wafers, where a pulsed laser is firstly used to introduce several layers of micro-cracks inside the wafer, along the designed dicing line, then a continuous wave (CW) laser is used to generate thermal stress around cracks, and, finally, the wafer is separated. A finite-element (FE) model was applied to analyze the behavior of CW laser heating and the evolution of the thermal stress field. Through experiments, SiC samples, with a thickness of 200 μm, were cut and analyzed, and the effect of the changing of continuous laser power on the DBAD system was also studied. According to the simulation and experiment results, the effectiveness of the DBAD method is certified. There is no more edge breakage because of the absence of the mechanical breaking process compared with traditional stealth dicing. The novel method can be adapted to the cutting of hard-brittle materials. Specifically for materials thinner than 200 μm, the breaking process in the traditional SiC dicing process can be omitted. It is indicated that the dual laser beam asynchronous dicing method has a great engineering potential for future SiC wafer dicing applications.
format	article
author	Zhe Zhang Zhidong Wen Haiyan Shi Qi Song Ziye Xu Man Li Yu Hou Zichen Zhang
author_facet	Zhe Zhang Zhidong Wen Haiyan Shi Qi Song Ziye Xu Man Li Yu Hou Zichen Zhang
author_sort	Zhe Zhang
title	Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer
title_short	Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer
title_full	Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer
title_fullStr	Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer
title_full_unstemmed	Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer
title_sort	dual laser beam asynchronous dicing of 4h-sic wafer
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/5e1b2f6864fd48049b59a688553a88ab
work_keys_str_mv	AT zhezhang duallaserbeamasynchronousdicingof4hsicwafer AT zhidongwen duallaserbeamasynchronousdicingof4hsicwafer AT haiyanshi duallaserbeamasynchronousdicingof4hsicwafer AT qisong duallaserbeamasynchronousdicingof4hsicwafer AT ziyexu duallaserbeamasynchronousdicingof4hsicwafer AT manli duallaserbeamasynchronousdicingof4hsicwafer AT yuhou duallaserbeamasynchronousdicingof4hsicwafer AT zichenzhang duallaserbeamasynchronousdicingof4hsicwafer
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Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer

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