Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer
SiC wafers, due to their hardness and brittleness, suffer from a low feed rate and a high failure rate during the dicing process. In this study, a novel dual laser beam asynchronous dicing method (DBAD) is proposed to improve the cutting quality of SiC wafers, where a pulsed laser is firstly used to...
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| Main Authors: | , , , , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
MDPI AG
2021
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| Subjects: | |
| Online Access: | https://doaj.org/article/5e1b2f6864fd48049b59a688553a88ab |
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