Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation

The ferroelectric field-effect transistor, which has attracted much attention for application as both a highly energy-efficient logic device and a non-volatile memory device, has often been studied within the framework of equilibrium thermodynamics. Here, the authors theoretically demonstrate the im...

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Autores principales:	Jasper Bizindavyi, Anne S. Verhulst, Bart Sorée, William G. Vandenberghe
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Astrophysics QB460-466 Physics QC1-999
Acceso en línea:	https://doaj.org/article/5e1bcda7f5bf4432b6d182bb7babf59f
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spelling	oai:doaj.org-article:5e1bcda7f5bf4432b6d182bb7babf59f2021-12-02T17:39:28ZThermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation10.1038/s42005-021-00583-72399-3650https://doaj.org/article/5e1bcda7f5bf4432b6d182bb7babf59f2021-04-01T00:00:00Zhttps://doi.org/10.1038/s42005-021-00583-7https://doaj.org/toc/2399-3650The ferroelectric field-effect transistor, which has attracted much attention for application as both a highly energy-efficient logic device and a non-volatile memory device, has often been studied within the framework of equilibrium thermodynamics. Here, the authors theoretically demonstrate the importance of utilizing the correct thermodynamic potential and investigate the impact of free charge accumulation on the equilibrium performance of ferroelectric-based systems.Jasper BizindavyiAnne S. VerhulstBart SoréeWilliam G. VandenbergheNature PortfolioarticleAstrophysicsQB460-466PhysicsQC1-999ENCommunications Physics, Vol 4, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Astrophysics QB460-466 Physics QC1-999
spellingShingle	Astrophysics QB460-466 Physics QC1-999 Jasper Bizindavyi Anne S. Verhulst Bart Sorée William G. Vandenberghe Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation
description	The ferroelectric field-effect transistor, which has attracted much attention for application as both a highly energy-efficient logic device and a non-volatile memory device, has often been studied within the framework of equilibrium thermodynamics. Here, the authors theoretically demonstrate the importance of utilizing the correct thermodynamic potential and investigate the impact of free charge accumulation on the equilibrium performance of ferroelectric-based systems.
format	article
author	Jasper Bizindavyi Anne S. Verhulst Bart Sorée William G. Vandenberghe
author_facet	Jasper Bizindavyi Anne S. Verhulst Bart Sorée William G. Vandenberghe
author_sort	Jasper Bizindavyi
title	Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation
title_short	Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation
title_full	Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation
title_fullStr	Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation
title_full_unstemmed	Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation
title_sort	thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/5e1bcda7f5bf4432b6d182bb7babf59f
work_keys_str_mv	AT jasperbizindavyi thermodynamicequilibriumtheoryrevealingincreasedhysteresisinferroelectricfieldeffecttransistorswithfreechargeaccumulation AT annesverhulst thermodynamicequilibriumtheoryrevealingincreasedhysteresisinferroelectricfieldeffecttransistorswithfreechargeaccumulation AT bartsoree thermodynamicequilibriumtheoryrevealingincreasedhysteresisinferroelectricfieldeffecttransistorswithfreechargeaccumulation AT williamgvandenberghe thermodynamicequilibriumtheoryrevealingincreasedhysteresisinferroelectricfieldeffecttransistorswithfreechargeaccumulation
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Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation

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