Fabrication of GaN nano-towers based self-powered UV photodetector

Abstract The fabrication of unique taper-ended GaN-Nanotowers structure based highly efficient ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN nanocolumnar structure (nanotowers) grown on AlN buffer layer exhibits higher photocurrent generation due to high qual...

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Autores principales:	Lalit Goswami, Neha Aggarwal, Pargam Vashishtha, Shubhendra Kumar Jain, Shruti Nirantar, Jahangeer Ahmed, M. A. Majeed Khan, Rajeshwari Pandey, Govind Gupta
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/5e2716015d3146e496d95b8298306188
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spelling	oai:doaj.org-article:5e2716015d3146e496d95b82983061882021-12-02T14:49:11ZFabrication of GaN nano-towers based self-powered UV photodetector10.1038/s41598-021-90450-w2045-2322https://doaj.org/article/5e2716015d3146e496d95b82983061882021-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-90450-whttps://doaj.org/toc/2045-2322Abstract The fabrication of unique taper-ended GaN-Nanotowers structure based highly efficient ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN nanocolumnar structure (nanotowers) grown on AlN buffer layer exhibits higher photocurrent generation due to high quality nanotowers morphology and increased surface/volume ratio which significantly enhances its responsivity upon ultraviolet exposure leading to outstanding performance from the developed detection device. The fabricated detector display low dark current (~ 12 nA), high ILight/IDark ratio (> 104), fast time-correlated transient response (~ 433 µs) upon ultraviolet (325 nm) illumination. A high photoresponsivity of 2.47 A/W is achieved in self-powered mode of operation. The reason behind such high performance could be attributed to built-in electric field developed from a difference in Schottky barrier heights will be discussed in detail. While in photoconductive mode, the responsivity is observed to be 35.4 A/W @ − 3 V along with very high external quantum efficiency (~ 104%), lower noise equivalent power (~ 10–13 WHz−1/2) and excellent UV–Vis selectivity. Nanotower structure with lower strain and dislocations as well as reduced trap states cumulatively contributed to augmented performance from the device. The utilization of these GaN-Nanotower structures can potentially be useful towards the fabrication of energy-efficient ultraviolet photodetectors.Lalit GoswamiNeha AggarwalPargam VashishthaShubhendra Kumar JainShruti NirantarJahangeer AhmedM. A. Majeed KhanRajeshwari PandeyGovind GuptaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Lalit Goswami Neha Aggarwal Pargam Vashishtha Shubhendra Kumar Jain Shruti Nirantar Jahangeer Ahmed M. A. Majeed Khan Rajeshwari Pandey Govind Gupta Fabrication of GaN nano-towers based self-powered UV photodetector
description	Abstract The fabrication of unique taper-ended GaN-Nanotowers structure based highly efficient ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN nanocolumnar structure (nanotowers) grown on AlN buffer layer exhibits higher photocurrent generation due to high quality nanotowers morphology and increased surface/volume ratio which significantly enhances its responsivity upon ultraviolet exposure leading to outstanding performance from the developed detection device. The fabricated detector display low dark current (~ 12 nA), high ILight/IDark ratio (> 104), fast time-correlated transient response (~ 433 µs) upon ultraviolet (325 nm) illumination. A high photoresponsivity of 2.47 A/W is achieved in self-powered mode of operation. The reason behind such high performance could be attributed to built-in electric field developed from a difference in Schottky barrier heights will be discussed in detail. While in photoconductive mode, the responsivity is observed to be 35.4 A/W @ − 3 V along with very high external quantum efficiency (~ 104%), lower noise equivalent power (~ 10–13 WHz−1/2) and excellent UV–Vis selectivity. Nanotower structure with lower strain and dislocations as well as reduced trap states cumulatively contributed to augmented performance from the device. The utilization of these GaN-Nanotower structures can potentially be useful towards the fabrication of energy-efficient ultraviolet photodetectors.
format	article
author	Lalit Goswami Neha Aggarwal Pargam Vashishtha Shubhendra Kumar Jain Shruti Nirantar Jahangeer Ahmed M. A. Majeed Khan Rajeshwari Pandey Govind Gupta
author_facet	Lalit Goswami Neha Aggarwal Pargam Vashishtha Shubhendra Kumar Jain Shruti Nirantar Jahangeer Ahmed M. A. Majeed Khan Rajeshwari Pandey Govind Gupta
author_sort	Lalit Goswami
title	Fabrication of GaN nano-towers based self-powered UV photodetector
title_short	Fabrication of GaN nano-towers based self-powered UV photodetector
title_full	Fabrication of GaN nano-towers based self-powered UV photodetector
title_fullStr	Fabrication of GaN nano-towers based self-powered UV photodetector
title_full_unstemmed	Fabrication of GaN nano-towers based self-powered UV photodetector
title_sort	fabrication of gan nano-towers based self-powered uv photodetector
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/5e2716015d3146e496d95b8298306188
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Fabrication of GaN nano-towers based self-powered UV photodetector

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