Influences of Powder Source Porosity on Mass Transport during AlN Crystal Growth Using Physical Vapor Transport Method
We developed a two-dimensional (2D) transport model to investigate mass transport during bulk AlN crystal growth via the physical vapor transport (PVT) process using the finite element method (FEM), taking the powder source porosity, buoyancy, and vapor diffusion into account. The porosity effects o...
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oai:doaj.org-article:5e75d43efc974e85be3c1460c617020d2021-11-25T17:19:46ZInfluences of Powder Source Porosity on Mass Transport during AlN Crystal Growth Using Physical Vapor Transport Method10.3390/cryst111114362073-4352https://doaj.org/article/5e75d43efc974e85be3c1460c617020d2021-11-01T00:00:00Zhttps://www.mdpi.com/2073-4352/11/11/1436https://doaj.org/toc/2073-4352We developed a two-dimensional (2D) transport model to investigate mass transport during bulk AlN crystal growth via the physical vapor transport (PVT) process using the finite element method (FEM), taking the powder source porosity, buoyancy, and vapor diffusion into account. The porosity effects of the powder source on mass transport under various growth conditions were investigated in detail. The simulation results show that the porosity of the powder source significantly affects the mass transport process during AlN sublimation growth. When the porosity of the powder source decreases, the growth rate becomes more uniform along the seed deposition surface, although the sublimation rate and crystal growth rate decrease, which can be attributed to the reduced specific surface area of the powder source and the reduced flow rate of Al vapor in the powder source. A flat growth interface can be achieved at a porosity of 0.2 under our specific growth conditions, which in turn facilitate the growth of high-quality AlN crystals and better yield. The decomposition of the powder source and the transport of Al vapor in the growth chamber can be suppressed by increasing the pressure. In addition, the AlN growth rate variation along the deposition surface can be attributed to the Al vapor pressure gradient caused by the temperature difference in the growth chamber.Danyang FuQikun WangGang ZhangZhe LiJiali HuangJiang WangLiang WuMDPI AGarticlecomputer simulationmass transfergrowth from vaporAlN single-crystal growthCrystallographyQD901-999ENCrystals, Vol 11, Iss 1436, p 1436 (2021) |
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computer simulation mass transfer growth from vapor AlN single-crystal growth Crystallography QD901-999 |
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computer simulation mass transfer growth from vapor AlN single-crystal growth Crystallography QD901-999 Danyang Fu Qikun Wang Gang Zhang Zhe Li Jiali Huang Jiang Wang Liang Wu Influences of Powder Source Porosity on Mass Transport during AlN Crystal Growth Using Physical Vapor Transport Method |
description |
We developed a two-dimensional (2D) transport model to investigate mass transport during bulk AlN crystal growth via the physical vapor transport (PVT) process using the finite element method (FEM), taking the powder source porosity, buoyancy, and vapor diffusion into account. The porosity effects of the powder source on mass transport under various growth conditions were investigated in detail. The simulation results show that the porosity of the powder source significantly affects the mass transport process during AlN sublimation growth. When the porosity of the powder source decreases, the growth rate becomes more uniform along the seed deposition surface, although the sublimation rate and crystal growth rate decrease, which can be attributed to the reduced specific surface area of the powder source and the reduced flow rate of Al vapor in the powder source. A flat growth interface can be achieved at a porosity of 0.2 under our specific growth conditions, which in turn facilitate the growth of high-quality AlN crystals and better yield. The decomposition of the powder source and the transport of Al vapor in the growth chamber can be suppressed by increasing the pressure. In addition, the AlN growth rate variation along the deposition surface can be attributed to the Al vapor pressure gradient caused by the temperature difference in the growth chamber. |
format |
article |
author |
Danyang Fu Qikun Wang Gang Zhang Zhe Li Jiali Huang Jiang Wang Liang Wu |
author_facet |
Danyang Fu Qikun Wang Gang Zhang Zhe Li Jiali Huang Jiang Wang Liang Wu |
author_sort |
Danyang Fu |
title |
Influences of Powder Source Porosity on Mass Transport during AlN Crystal Growth Using Physical Vapor Transport Method |
title_short |
Influences of Powder Source Porosity on Mass Transport during AlN Crystal Growth Using Physical Vapor Transport Method |
title_full |
Influences of Powder Source Porosity on Mass Transport during AlN Crystal Growth Using Physical Vapor Transport Method |
title_fullStr |
Influences of Powder Source Porosity on Mass Transport during AlN Crystal Growth Using Physical Vapor Transport Method |
title_full_unstemmed |
Influences of Powder Source Porosity on Mass Transport during AlN Crystal Growth Using Physical Vapor Transport Method |
title_sort |
influences of powder source porosity on mass transport during aln crystal growth using physical vapor transport method |
publisher |
MDPI AG |
publishDate |
2021 |
url |
https://doaj.org/article/5e75d43efc974e85be3c1460c617020d |
work_keys_str_mv |
AT danyangfu influencesofpowdersourceporosityonmasstransportduringalncrystalgrowthusingphysicalvaportransportmethod AT qikunwang influencesofpowdersourceporosityonmasstransportduringalncrystalgrowthusingphysicalvaportransportmethod AT gangzhang influencesofpowdersourceporosityonmasstransportduringalncrystalgrowthusingphysicalvaportransportmethod AT zheli influencesofpowdersourceporosityonmasstransportduringalncrystalgrowthusingphysicalvaportransportmethod AT jialihuang influencesofpowdersourceporosityonmasstransportduringalncrystalgrowthusingphysicalvaportransportmethod AT jiangwang influencesofpowdersourceporosityonmasstransportduringalncrystalgrowthusingphysicalvaportransportmethod AT liangwu influencesofpowdersourceporosityonmasstransportduringalncrystalgrowthusingphysicalvaportransportmethod |
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1718412473617350656 |