Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

Fe-doped 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) thin films were grown in Pt/Ti/SiO2/Si substrate by a chemical solution deposition method. Effects of the annealing temperature and dop...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Chao Feng, Tong Liu, Xinyu Bu, Shifeng Huang
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	PMN-PT thin films preferred orientation ferroelectric property dielectric property Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/5f44aff3fd304a04b5eb34bd0067198f
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:5f44aff3fd304a04b5eb34bd0067198f
record_format	dspace
spelling	oai:doaj.org-article:5f44aff3fd304a04b5eb34bd0067198f2021-11-25T18:31:57ZEnhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films10.3390/nano111130432079-4991https://doaj.org/article/5f44aff3fd304a04b5eb34bd0067198f2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/3043https://doaj.org/toc/2079-4991Fe-doped 0.71Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.29PbTiO<sub>3</sub> (PMN-PT) thin films were grown in Pt/Ti/SiO<sub>2</sub>/Si substrate by a chemical solution deposition method. Effects of the annealing temperature and doping concentration on the crystallinity, microstructure, ferroelectric and dielectric properties of thin film were investigated. High (111) preferred orientation and density columnar structure were achieved in the 2% Fe-doped PMN-PT thin film annealed at 650 °C. The preferred orientation was transferred to a random orientation as the doping concentration increased. A 2% Fe-doped PMN-PT thin film showed the effectively reduced leakage current density, which was due to the fact that the oxygen vacancies were effectively restricted and a transition of Ti<sup>4+</sup> to Ti<sup>3+</sup> was prevented. The optimal ferroelectric properties of 2% Fe-doped PMN-PT thin film annealed at 650 °C were identified with slim polarization-applied field loops, high saturation polarization (<i>P</i><sub>s</sub> = 78.8 µC/cm<sup>2</sup>), remanent polarization (<i>P</i><sub>r</sub> = 23.1 µC/cm<sup>2</sup>) and low coercive voltage (<i>E</i><sub>c</sub> = 100 kV/cm). Moreover, the 2% Fe-doped PMN-PT thin film annealed at 650 °C showed an excellent dielectric performance with a high dielectric constant (<i>ε</i><sub>r</sub> ~1300 at 1 kHz).Chao FengTong LiuXinyu BuShifeng HuangMDPI AGarticlePMN-PT thin filmspreferred orientationferroelectric propertydielectric propertyChemistryQD1-999ENNanomaterials, Vol 11, Iss 3043, p 3043 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	PMN-PT thin films preferred orientation ferroelectric property dielectric property Chemistry QD1-999
spellingShingle	PMN-PT thin films preferred orientation ferroelectric property dielectric property Chemistry QD1-999 Chao Feng Tong Liu Xinyu Bu Shifeng Huang Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films
description	Fe-doped 0.71Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.29PbTiO<sub>3</sub> (PMN-PT) thin films were grown in Pt/Ti/SiO<sub>2</sub>/Si substrate by a chemical solution deposition method. Effects of the annealing temperature and doping concentration on the crystallinity, microstructure, ferroelectric and dielectric properties of thin film were investigated. High (111) preferred orientation and density columnar structure were achieved in the 2% Fe-doped PMN-PT thin film annealed at 650 °C. The preferred orientation was transferred to a random orientation as the doping concentration increased. A 2% Fe-doped PMN-PT thin film showed the effectively reduced leakage current density, which was due to the fact that the oxygen vacancies were effectively restricted and a transition of Ti<sup>4+</sup> to Ti<sup>3+</sup> was prevented. The optimal ferroelectric properties of 2% Fe-doped PMN-PT thin film annealed at 650 °C were identified with slim polarization-applied field loops, high saturation polarization (<i>P</i><sub>s</sub> = 78.8 µC/cm<sup>2</sup>), remanent polarization (<i>P</i><sub>r</sub> = 23.1 µC/cm<sup>2</sup>) and low coercive voltage (<i>E</i><sub>c</sub> = 100 kV/cm). Moreover, the 2% Fe-doped PMN-PT thin film annealed at 650 °C showed an excellent dielectric performance with a high dielectric constant (<i>ε</i><sub>r</sub> ~1300 at 1 kHz).
format	article
author	Chao Feng Tong Liu Xinyu Bu Shifeng Huang
author_facet	Chao Feng Tong Liu Xinyu Bu Shifeng Huang
author_sort	Chao Feng
title	Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films
title_short	Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films
title_full	Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films
title_fullStr	Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films
title_full_unstemmed	Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films
title_sort	enhanced ferroelectric, dielectric properties of fe-doped pmn-pt thin films
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/5f44aff3fd304a04b5eb34bd0067198f
work_keys_str_mv	AT chaofeng enhancedferroelectricdielectricpropertiesoffedopedpmnptthinfilms AT tongliu enhancedferroelectricdielectricpropertiesoffedopedpmnptthinfilms AT xinyubu enhancedferroelectricdielectricpropertiesoffedopedpmnptthinfilms AT shifenghuang enhancedferroelectricdielectricpropertiesoffedopedpmnptthinfilms
_version_	1718411018547232768

Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

Ejemplares similares