Photonic curing of solution-deposited ZrO2 dielectric on PEN: a path towards high-throughput processing of oxide electronics

Abstract High-throughput manufacturing of oxide electronics will enable new applications ranging from large-area displays to flexible medical devices and low-cost solar panels. However, high-quality oxide films from solution-based precursors typically require 20 min or more of thermal annealing at h...

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Autores principales:	Trey B. Daunis, Kurt A. Schroder, Julia W. P. Hsu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/5f69195ac7eb4d1eaa982d2ac4dc6f41
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spelling	oai:doaj.org-article:5f69195ac7eb4d1eaa982d2ac4dc6f412021-12-02T16:56:09ZPhotonic curing of solution-deposited ZrO2 dielectric on PEN: a path towards high-throughput processing of oxide electronics10.1038/s41528-020-0070-42397-4621https://doaj.org/article/5f69195ac7eb4d1eaa982d2ac4dc6f412020-04-01T00:00:00Zhttps://doi.org/10.1038/s41528-020-0070-4https://doaj.org/toc/2397-4621Abstract High-throughput manufacturing of oxide electronics will enable new applications ranging from large-area displays to flexible medical devices and low-cost solar panels. However, high-quality oxide films from solution-based precursors typically require 20 min or more of thermal annealing at high temperature (>250 °C) for each layer, severely limiting both the throughput and substrate choice. Here, we report high-speed photonic curing of ZrO2 dielectric thin films on flexible plastic substrates. The curing and patterning processes can be achieved simultaneously by using shadow mask patterning or adjusting conditions to convert oxide only on top of underlying metal contacts, i.e. self-aligned patterning. Metal–insulator–metal capacitors using two layers of ZrO2 films photonically cured in just 100 s per layer show non-dispersive capacitance–frequency behaviour from 102 to 106 Hz, high areal capacitance of 200 nF/cm2 and low dissipation factor of 0.03 at 105 Hz, leakage current density of ~10−7 A/cm2 at an applied field of 2 MV/cm, and a breakdown field of nearly 8 MV/cm. Using an upgraded tool, similar dielectric properties are achieved in as short as 100 ms using a single pulse of light, revealing a pathway to oxide film processing beyond 30 m/min.Trey B. DaunisKurt A. SchroderJulia W. P. HsuNature PortfolioarticleElectronicsTK7800-8360Materials of engineering and construction. Mechanics of materialsTA401-492ENnpj Flexible Electronics, Vol 4, Iss 1, Pp 1-7 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Electronics TK7800-8360 Materials of engineering and construction. Mechanics of materials TA401-492 Trey B. Daunis Kurt A. Schroder Julia W. P. Hsu Photonic curing of solution-deposited ZrO2 dielectric on PEN: a path towards high-throughput processing of oxide electronics
description	Abstract High-throughput manufacturing of oxide electronics will enable new applications ranging from large-area displays to flexible medical devices and low-cost solar panels. However, high-quality oxide films from solution-based precursors typically require 20 min or more of thermal annealing at high temperature (>250 °C) for each layer, severely limiting both the throughput and substrate choice. Here, we report high-speed photonic curing of ZrO2 dielectric thin films on flexible plastic substrates. The curing and patterning processes can be achieved simultaneously by using shadow mask patterning or adjusting conditions to convert oxide only on top of underlying metal contacts, i.e. self-aligned patterning. Metal–insulator–metal capacitors using two layers of ZrO2 films photonically cured in just 100 s per layer show non-dispersive capacitance–frequency behaviour from 102 to 106 Hz, high areal capacitance of 200 nF/cm2 and low dissipation factor of 0.03 at 105 Hz, leakage current density of ~10−7 A/cm2 at an applied field of 2 MV/cm, and a breakdown field of nearly 8 MV/cm. Using an upgraded tool, similar dielectric properties are achieved in as short as 100 ms using a single pulse of light, revealing a pathway to oxide film processing beyond 30 m/min.
format	article
author	Trey B. Daunis Kurt A. Schroder Julia W. P. Hsu
author_facet	Trey B. Daunis Kurt A. Schroder Julia W. P. Hsu
author_sort	Trey B. Daunis
title	Photonic curing of solution-deposited ZrO2 dielectric on PEN: a path towards high-throughput processing of oxide electronics
title_short	Photonic curing of solution-deposited ZrO2 dielectric on PEN: a path towards high-throughput processing of oxide electronics
title_full	Photonic curing of solution-deposited ZrO2 dielectric on PEN: a path towards high-throughput processing of oxide electronics
title_fullStr	Photonic curing of solution-deposited ZrO2 dielectric on PEN: a path towards high-throughput processing of oxide electronics
title_full_unstemmed	Photonic curing of solution-deposited ZrO2 dielectric on PEN: a path towards high-throughput processing of oxide electronics
title_sort	photonic curing of solution-deposited zro2 dielectric on pen: a path towards high-throughput processing of oxide electronics
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/5f69195ac7eb4d1eaa982d2ac4dc6f41
work_keys_str_mv	AT treybdaunis photoniccuringofsolutiondepositedzro2dielectriconpenapathtowardshighthroughputprocessingofoxideelectronics AT kurtaschroder photoniccuringofsolutiondepositedzro2dielectriconpenapathtowardshighthroughputprocessingofoxideelectronics AT juliawphsu photoniccuringofsolutiondepositedzro2dielectriconpenapathtowardshighthroughputprocessingofoxideelectronics
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Photonic curing of solution-deposited ZrO2 dielectric on PEN: a path towards high-throughput processing of oxide electronics

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