A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?
Optoelectronics: Graphene breaks limit of silicon-based UV detection A high-performance graphene/silicon ultraviolet (UV) photodetector significantly increases the upper-limit of traditional silicon-based UV detectors. A team led by Yang Xu at China’s Zhejiang University fabricated silicon-based UV...
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| Auteurs principaux: | , , , , , , , , , , , , , , , , , , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2017
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| Accès en ligne: | https://doaj.org/article/5ffb3f7e230c4261937f4ebc80feeb75 |
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| Résumé: | Optoelectronics: Graphene breaks limit of silicon-based UV detection A high-performance graphene/silicon ultraviolet (UV) photodetector significantly increases the upper-limit of traditional silicon-based UV detectors. A team led by Yang Xu at China’s Zhejiang University fabricated silicon-based UV detectors using graphene with unique UV absorption property, leading to ultra-long lifetime of hot carriers that contribute to photocurrent, and even to carrier multiplication. In the near- and mid-UV regime, the improved performance parameters are photocurrent responsivity (0.20 A W−1), response time (<5 ns), specific detectivity (1.6 × 1013 Jones), and IQE (>100%). The key metrics of graphene/Si detector outperform those of UV detectors based on Si, GaN, SiC, etc. These results show great promise in applications such as wearable devices, secured mobile communication, and “dissipation-less” remote sensor networks. |
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