A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

Optoelectronics: Graphene breaks limit of silicon-based UV detection A high-performance graphene/silicon ultraviolet (UV) photodetector significantly increases the upper-limit of traditional silicon-based UV detectors. A team led by Yang Xu at China’s Zhejiang University fabricated silicon-based UV...

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Autores principales: Xia Wan, Yang Xu, Hongwei Guo, Khurram Shehzad, Ayaz Ali, Yuan Liu, Jianyi Yang, Daoxin Dai, Cheng-Te Lin, Liwei Liu, Hung-Chieh Cheng, Fengqiu Wang, Xiaomu Wang, Hai Lu, Weida Hu, Xiaodong Pi, Yaping Dan, Jikui Luo, Tawfique Hasan, Xiangfeng Duan, Xinming Li, Jianbin Xu, Deren Yang, Tianling Ren, Bin Yu
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Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/5ffb3f7e230c4261937f4ebc80feeb75
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spelling oai:doaj.org-article:5ffb3f7e230c4261937f4ebc80feeb752021-12-02T14:18:34ZA self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?10.1038/s41699-017-0008-42397-7132https://doaj.org/article/5ffb3f7e230c4261937f4ebc80feeb752017-04-01T00:00:00Zhttps://doi.org/10.1038/s41699-017-0008-4https://doaj.org/toc/2397-7132Optoelectronics: Graphene breaks limit of silicon-based UV detection A high-performance graphene/silicon ultraviolet (UV) photodetector significantly increases the upper-limit of traditional silicon-based UV detectors. A team led by Yang Xu at China’s Zhejiang University fabricated silicon-based UV detectors using graphene with unique UV absorption property, leading to ultra-long lifetime of hot carriers that contribute to photocurrent, and even to carrier multiplication. In the near- and mid-UV regime, the improved performance parameters are photocurrent responsivity (0.20 A W−1), response time (<5 ns), specific detectivity (1.6 × 1013 Jones), and IQE (>100%). The key metrics of graphene/Si detector outperform those of UV detectors based on Si, GaN, SiC, etc. These results show great promise in applications such as wearable devices, secured mobile communication, and “dissipation-less” remote sensor networks.Xia WanYang XuHongwei GuoKhurram ShehzadAyaz AliYuan LiuJianyi YangDaoxin DaiCheng-Te LinLiwei LiuHung-Chieh ChengFengqiu WangXiaomu WangHai LuWeida HuXiaodong PiYaping DanJikui LuoTawfique HasanXiangfeng DuanXinming LiJianbin XuDeren YangTianling RenBin YuNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 1, Iss 1, Pp 1-8 (2017)
institution DOAJ
collection DOAJ
language EN
topic Materials of engineering and construction. Mechanics of materials
TA401-492
Chemistry
QD1-999
spellingShingle Materials of engineering and construction. Mechanics of materials
TA401-492
Chemistry
QD1-999
Xia Wan
Yang Xu
Hongwei Guo
Khurram Shehzad
Ayaz Ali
Yuan Liu
Jianyi Yang
Daoxin Dai
Cheng-Te Lin
Liwei Liu
Hung-Chieh Cheng
Fengqiu Wang
Xiaomu Wang
Hai Lu
Weida Hu
Xiaodong Pi
Yaping Dan
Jikui Luo
Tawfique Hasan
Xiangfeng Duan
Xinming Li
Jianbin Xu
Deren Yang
Tianling Ren
Bin Yu
A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?
description Optoelectronics: Graphene breaks limit of silicon-based UV detection A high-performance graphene/silicon ultraviolet (UV) photodetector significantly increases the upper-limit of traditional silicon-based UV detectors. A team led by Yang Xu at China’s Zhejiang University fabricated silicon-based UV detectors using graphene with unique UV absorption property, leading to ultra-long lifetime of hot carriers that contribute to photocurrent, and even to carrier multiplication. In the near- and mid-UV regime, the improved performance parameters are photocurrent responsivity (0.20 A W−1), response time (<5 ns), specific detectivity (1.6 × 1013 Jones), and IQE (>100%). The key metrics of graphene/Si detector outperform those of UV detectors based on Si, GaN, SiC, etc. These results show great promise in applications such as wearable devices, secured mobile communication, and “dissipation-less” remote sensor networks.
format article
author Xia Wan
Yang Xu
Hongwei Guo
Khurram Shehzad
Ayaz Ali
Yuan Liu
Jianyi Yang
Daoxin Dai
Cheng-Te Lin
Liwei Liu
Hung-Chieh Cheng
Fengqiu Wang
Xiaomu Wang
Hai Lu
Weida Hu
Xiaodong Pi
Yaping Dan
Jikui Luo
Tawfique Hasan
Xiangfeng Duan
Xinming Li
Jianbin Xu
Deren Yang
Tianling Ren
Bin Yu
author_facet Xia Wan
Yang Xu
Hongwei Guo
Khurram Shehzad
Ayaz Ali
Yuan Liu
Jianyi Yang
Daoxin Dai
Cheng-Te Lin
Liwei Liu
Hung-Chieh Cheng
Fengqiu Wang
Xiaomu Wang
Hai Lu
Weida Hu
Xiaodong Pi
Yaping Dan
Jikui Luo
Tawfique Hasan
Xiangfeng Duan
Xinming Li
Jianbin Xu
Deren Yang
Tianling Ren
Bin Yu
author_sort Xia Wan
title A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?
title_short A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?
title_full A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?
title_fullStr A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?
title_full_unstemmed A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?
title_sort self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/5ffb3f7e230c4261937f4ebc80feeb75
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