Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ

Abstract Switching magnetization in a perpendicular magnetic tunnel junction (pMTJ) via voltage controlled magnetic anisotropy (VCMA) has shown the potential to markedly reduce switching energy. However, the requirement of an external magnetic field poses a critical bottleneck for its practical appl...

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Autores principales:	Jiefang Deng, Gengchiau Liang, Gaurav Gupta
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/600291002c294534bfcc2200bbe2ecf0
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id	oai:doaj.org-article:600291002c294534bfcc2200bbe2ecf0
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spelling	oai:doaj.org-article:600291002c294534bfcc2200bbe2ecf02021-12-02T11:52:29ZUltrafast and low-energy switching in voltage-controlled elliptical pMTJ10.1038/s41598-017-16292-72045-2322https://doaj.org/article/600291002c294534bfcc2200bbe2ecf02017-11-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-16292-7https://doaj.org/toc/2045-2322Abstract Switching magnetization in a perpendicular magnetic tunnel junction (pMTJ) via voltage controlled magnetic anisotropy (VCMA) has shown the potential to markedly reduce switching energy. However, the requirement of an external magnetic field poses a critical bottleneck for its practical applications. In this work, we propose an elliptical-shaped pMTJ to eliminate the requirement of providing an external field by an additional circuit. We demonstrate that a 10 nm thick in-plane magnetized bias layer (BL) separated by a metallic spacer of 3 nm from the free layer (FL) can be engineered within the MTJ stack to provide the 50 mT bias magnetic field for switching. By conducting macrospin simulation, we find that a fast switching in 0.38 ns with energy consumption as low as 0.3 fJ at a voltage of 1.6 V can be achieved. Furthermore, we study the phase diagram of switching probability, showing that a pulse duration margin of 0.15 ns is obtained and low-voltage operation (~1 V) is favored. Finally, the MTJ scalability is considered, and it is found that scaling down may not be appealing in terms of both the energy consumption and the switching time for precession based VCMA switching.Jiefang DengGengchiau LiangGaurav GuptaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Jiefang Deng Gengchiau Liang Gaurav Gupta Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ
description	Abstract Switching magnetization in a perpendicular magnetic tunnel junction (pMTJ) via voltage controlled magnetic anisotropy (VCMA) has shown the potential to markedly reduce switching energy. However, the requirement of an external magnetic field poses a critical bottleneck for its practical applications. In this work, we propose an elliptical-shaped pMTJ to eliminate the requirement of providing an external field by an additional circuit. We demonstrate that a 10 nm thick in-plane magnetized bias layer (BL) separated by a metallic spacer of 3 nm from the free layer (FL) can be engineered within the MTJ stack to provide the 50 mT bias magnetic field for switching. By conducting macrospin simulation, we find that a fast switching in 0.38 ns with energy consumption as low as 0.3 fJ at a voltage of 1.6 V can be achieved. Furthermore, we study the phase diagram of switching probability, showing that a pulse duration margin of 0.15 ns is obtained and low-voltage operation (~1 V) is favored. Finally, the MTJ scalability is considered, and it is found that scaling down may not be appealing in terms of both the energy consumption and the switching time for precession based VCMA switching.
format	article
author	Jiefang Deng Gengchiau Liang Gaurav Gupta
author_facet	Jiefang Deng Gengchiau Liang Gaurav Gupta
author_sort	Jiefang Deng
title	Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ
title_short	Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ
title_full	Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ
title_fullStr	Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ
title_full_unstemmed	Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ
title_sort	ultrafast and low-energy switching in voltage-controlled elliptical pmtj
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/600291002c294534bfcc2200bbe2ecf0
work_keys_str_mv	AT jiefangdeng ultrafastandlowenergyswitchinginvoltagecontrolledellipticalpmtj AT gengchiauliang ultrafastandlowenergyswitchinginvoltagecontrolledellipticalpmtj AT gauravgupta ultrafastandlowenergyswitchinginvoltagecontrolledellipticalpmtj
_version_	1718395049086025728

Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ

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