Photoelectrical parameters of ncds-pcdte thin film solar cells with CDO buffer layer

The results of the studies of the effect of a CdO buffer layer on the photoelectrical parameters of CdS–CdTe solar cells have been described. It has been found that the formation of a 5–8 nm thick CdO buffer layer leads to an increase in the CdS–CdTe solar cell open circuit voltage (Voc) by 90–140 m...

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Autores principales:	Gaşin, Petru, Gagara, Ludmila, Chetruş, Petru, Inculeţ, Ion, Fiodorov, Vladimir, Quassem-Amjad, Al.
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2016
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/6033ae3b15e74b6ca284655d93aa10f9
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spelling	oai:doaj.org-article:6033ae3b15e74b6ca284655d93aa10f92021-11-21T11:57:49ZPhotoelectrical parameters of ncds-pcdte thin film solar cells with CDO buffer layer537.312.5+621.383.512537-63651810-648Xhttps://doaj.org/article/6033ae3b15e74b6ca284655d93aa10f92016-06-01T00:00:00Zhttps://mjps.nanotech.md/archive/2016/article/48842https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The results of the studies of the effect of a CdO buffer layer on the photoelectrical parameters of CdS–CdTe solar cells have been described. It has been found that the formation of a 5–8 nm thick CdO buffer layer leads to an increase in the CdS–CdTe solar cell open circuit voltage (Voc) by 90–140 mV, short circuit current (Isc) by 1.4–3.2 mA/cm2, and efficiency by 2.8–4.1% at 300 K and an illumination of 100 mW/cm2. Gaşin, PetruGagara, LudmilaChetruş, PetruInculeţ, IonFiodorov, VladimirQuassem-Amjad, Al.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 15, Iss 1-2, Pp 54-59 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Gaşin, Petru Gagara, Ludmila Chetruş, Petru Inculeţ, Ion Fiodorov, Vladimir Quassem-Amjad, Al. Photoelectrical parameters of ncds-pcdte thin film solar cells with CDO buffer layer
description	The results of the studies of the effect of a CdO buffer layer on the photoelectrical parameters of CdS–CdTe solar cells have been described. It has been found that the formation of a 5–8 nm thick CdO buffer layer leads to an increase in the CdS–CdTe solar cell open circuit voltage (Voc) by 90–140 mV, short circuit current (Isc) by 1.4–3.2 mA/cm2, and efficiency by 2.8–4.1% at 300 K and an illumination of 100 mW/cm2.
format	article
author	Gaşin, Petru Gagara, Ludmila Chetruş, Petru Inculeţ, Ion Fiodorov, Vladimir Quassem-Amjad, Al.
author_facet	Gaşin, Petru Gagara, Ludmila Chetruş, Petru Inculeţ, Ion Fiodorov, Vladimir Quassem-Amjad, Al.
author_sort	Gaşin, Petru
title	Photoelectrical parameters of ncds-pcdte thin film solar cells with CDO buffer layer
title_short	Photoelectrical parameters of ncds-pcdte thin film solar cells with CDO buffer layer
title_full	Photoelectrical parameters of ncds-pcdte thin film solar cells with CDO buffer layer
title_fullStr	Photoelectrical parameters of ncds-pcdte thin film solar cells with CDO buffer layer
title_full_unstemmed	Photoelectrical parameters of ncds-pcdte thin film solar cells with CDO buffer layer
title_sort	photoelectrical parameters of ncds-pcdte thin film solar cells with cdo buffer layer
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2016
url	https://doaj.org/article/6033ae3b15e74b6ca284655d93aa10f9
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Photoelectrical parameters of ncds-pcdte thin film solar cells with CDO buffer layer

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