Two-dimensional centrosymmetrical antiferromagnets for spin photogalvanic devices
Abstract Spin-dependent photogalvanic effect (PGE) in low-dimensional magnetic systems has recently attracted intensive attention. Based on first-principle transport calculations and symmetry analyses, we propose a robust scheme to generate pure spin current by PGE in centrosymmetric materials with...
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2021
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oai:doaj.org-article:60a3a340ab2e4e069178cacabdec135a2021-12-02T14:06:53ZTwo-dimensional centrosymmetrical antiferromagnets for spin photogalvanic devices10.1038/s41534-021-00365-72056-6387https://doaj.org/article/60a3a340ab2e4e069178cacabdec135a2021-02-01T00:00:00Zhttps://doi.org/10.1038/s41534-021-00365-7https://doaj.org/toc/2056-6387Abstract Spin-dependent photogalvanic effect (PGE) in low-dimensional magnetic systems has recently attracted intensive attention. Based on first-principle transport calculations and symmetry analyses, we propose a robust scheme to generate pure spin current by PGE in centrosymmetric materials with spin polarization antisymmetry. As a demonstration, the idea is successfully applied to a photoelectric device constructed with a zigzag graphene nanoribbon (ZGNR), which has intrinsic antiferromagnetic coupling between the two edges and spin degenerate band structure. It suggests that spin splitting is not a prerequisite for pure spin current generation. More interestingly, by further introducing external transverse electric fields to the two leads to lift the spin degeneracy, the device may behave multifunctionally, capable of producing fully spin-polarized current or pure spin current, depending on whether the fields in the two leads are parallel or antiparallel. Very importantly, our scheme of pure spin current generation with PGE is not limited to ZGNR and can be extended to other two-dimensional (2D) centrosymmetric magnetic materials with spin polarization antisymmetry, suggesting a promising category of 2D platforms for PGE-based pure spin current generation.Peng JiangXixi TaoHua HaoYushen LiuXiaohong ZhengZhi ZengNature PortfolioarticlePhysicsQC1-999Electronic computers. Computer scienceQA75.5-76.95ENnpj Quantum Information, Vol 7, Iss 1, Pp 1-9 (2021) |
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Physics QC1-999 Electronic computers. Computer science QA75.5-76.95 |
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Physics QC1-999 Electronic computers. Computer science QA75.5-76.95 Peng Jiang Xixi Tao Hua Hao Yushen Liu Xiaohong Zheng Zhi Zeng Two-dimensional centrosymmetrical antiferromagnets for spin photogalvanic devices |
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Abstract Spin-dependent photogalvanic effect (PGE) in low-dimensional magnetic systems has recently attracted intensive attention. Based on first-principle transport calculations and symmetry analyses, we propose a robust scheme to generate pure spin current by PGE in centrosymmetric materials with spin polarization antisymmetry. As a demonstration, the idea is successfully applied to a photoelectric device constructed with a zigzag graphene nanoribbon (ZGNR), which has intrinsic antiferromagnetic coupling between the two edges and spin degenerate band structure. It suggests that spin splitting is not a prerequisite for pure spin current generation. More interestingly, by further introducing external transverse electric fields to the two leads to lift the spin degeneracy, the device may behave multifunctionally, capable of producing fully spin-polarized current or pure spin current, depending on whether the fields in the two leads are parallel or antiparallel. Very importantly, our scheme of pure spin current generation with PGE is not limited to ZGNR and can be extended to other two-dimensional (2D) centrosymmetric magnetic materials with spin polarization antisymmetry, suggesting a promising category of 2D platforms for PGE-based pure spin current generation. |
format |
article |
author |
Peng Jiang Xixi Tao Hua Hao Yushen Liu Xiaohong Zheng Zhi Zeng |
author_facet |
Peng Jiang Xixi Tao Hua Hao Yushen Liu Xiaohong Zheng Zhi Zeng |
author_sort |
Peng Jiang |
title |
Two-dimensional centrosymmetrical antiferromagnets for spin photogalvanic devices |
title_short |
Two-dimensional centrosymmetrical antiferromagnets for spin photogalvanic devices |
title_full |
Two-dimensional centrosymmetrical antiferromagnets for spin photogalvanic devices |
title_fullStr |
Two-dimensional centrosymmetrical antiferromagnets for spin photogalvanic devices |
title_full_unstemmed |
Two-dimensional centrosymmetrical antiferromagnets for spin photogalvanic devices |
title_sort |
two-dimensional centrosymmetrical antiferromagnets for spin photogalvanic devices |
publisher |
Nature Portfolio |
publishDate |
2021 |
url |
https://doaj.org/article/60a3a340ab2e4e069178cacabdec135a |
work_keys_str_mv |
AT pengjiang twodimensionalcentrosymmetricalantiferromagnetsforspinphotogalvanicdevices AT xixitao twodimensionalcentrosymmetricalantiferromagnetsforspinphotogalvanicdevices AT huahao twodimensionalcentrosymmetricalantiferromagnetsforspinphotogalvanicdevices AT yushenliu twodimensionalcentrosymmetricalantiferromagnetsforspinphotogalvanicdevices AT xiaohongzheng twodimensionalcentrosymmetricalantiferromagnetsforspinphotogalvanicdevices AT zhizeng twodimensionalcentrosymmetricalantiferromagnetsforspinphotogalvanicdevices |
_version_ |
1718391965659168768 |