A novel true random number generator based on a stochastic diffusive memristor

Memristors can switch between high and low electrical-resistance states, but the switching behaviour can be unpredictable. Here, the authors harness this unpredictability to develop a memristor-based true random number generator that uses the stochastic delay time of threshold switching

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Autores principales:	Hao Jiang, Daniel Belkin, Sergey E. Savel’ev, Siyan Lin, Zhongrui Wang, Yunning Li, Saumil Joshi, Rivu Midya, Can Li, Mingyi Rao, Mark Barnell, Qing Wu, J. Joshua Yang, Qiangfei Xia
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/60bc66f1c81849a0b3d569fe6fed6467
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spelling	oai:doaj.org-article:60bc66f1c81849a0b3d569fe6fed64672021-12-02T17:06:18ZA novel true random number generator based on a stochastic diffusive memristor10.1038/s41467-017-00869-x2041-1723https://doaj.org/article/60bc66f1c81849a0b3d569fe6fed64672017-10-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-00869-xhttps://doaj.org/toc/2041-1723Memristors can switch between high and low electrical-resistance states, but the switching behaviour can be unpredictable. Here, the authors harness this unpredictability to develop a memristor-based true random number generator that uses the stochastic delay time of threshold switchingHao JiangDaniel BelkinSergey E. Savel’evSiyan LinZhongrui WangYunning LiSaumil JoshiRivu MidyaCan LiMingyi RaoMark BarnellQing WuJ. Joshua YangQiangfei XiaNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Hao Jiang Daniel Belkin Sergey E. Savel’ev Siyan Lin Zhongrui Wang Yunning Li Saumil Joshi Rivu Midya Can Li Mingyi Rao Mark Barnell Qing Wu J. Joshua Yang Qiangfei Xia A novel true random number generator based on a stochastic diffusive memristor
description	Memristors can switch between high and low electrical-resistance states, but the switching behaviour can be unpredictable. Here, the authors harness this unpredictability to develop a memristor-based true random number generator that uses the stochastic delay time of threshold switching
format	article
author	Hao Jiang Daniel Belkin Sergey E. Savel’ev Siyan Lin Zhongrui Wang Yunning Li Saumil Joshi Rivu Midya Can Li Mingyi Rao Mark Barnell Qing Wu J. Joshua Yang Qiangfei Xia
author_facet	Hao Jiang Daniel Belkin Sergey E. Savel’ev Siyan Lin Zhongrui Wang Yunning Li Saumil Joshi Rivu Midya Can Li Mingyi Rao Mark Barnell Qing Wu J. Joshua Yang Qiangfei Xia
author_sort	Hao Jiang
title	A novel true random number generator based on a stochastic diffusive memristor
title_short	A novel true random number generator based on a stochastic diffusive memristor
title_full	A novel true random number generator based on a stochastic diffusive memristor
title_fullStr	A novel true random number generator based on a stochastic diffusive memristor
title_full_unstemmed	A novel true random number generator based on a stochastic diffusive memristor
title_sort	novel true random number generator based on a stochastic diffusive memristor
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/60bc66f1c81849a0b3d569fe6fed6467
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A novel true random number generator based on a stochastic diffusive memristor

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