A novel true random number generator based on a stochastic diffusive memristor

A novel true random number generator based on a stochastic diffusive memristor

Memristors can switch between high and low electrical-resistance states, but the switching behaviour can be unpredictable. Here, the authors harness this unpredictability to develop a memristor-based true random number generator that uses the stochastic delay time of threshold switching

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Detalles Bibliográficos
Autores principales: Hao Jiang, Daniel Belkin, Sergey E. Savel’ev, Siyan Lin, Zhongrui Wang, Yunning Li, Saumil Joshi, Rivu Midya, Can Li, Mingyi Rao, Mark Barnell, Qing Wu, J. Joshua Yang, Qiangfei Xia
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Science
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Acceso en línea:https://doaj.org/article/60bc66f1c81849a0b3d569fe6fed6467
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