Quantitative determination of spin–orbit-induced magnetic field in GaMnAs by field-scan planar Hall measurements

Abstract Spin–orbit-induced (SOI) effective magnetic field in GaMnAs film with in-plane magnetic anisotropy has been investigated by planar Hall effect measurements. The presence of SOI field was identified by a shift between planar Hall resistance (PHR) hystereses observed with positive and negativ...

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Autores principales:	Seongjoon Park, Shinwoo Lee, Kyung Jae Lee, SeongJin Park, Phunvira Chongthanaphisut, Jiyeong Jang, Sanghoon Lee, Xinyu Liu, M. Dobrowolska, Jacek K. Furdyna
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/60c466c0b9e948ed9ea8c6bc96ab00d2
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spelling	oai:doaj.org-article:60c466c0b9e948ed9ea8c6bc96ab00d22021-12-02T16:50:22ZQuantitative determination of spin–orbit-induced magnetic field in GaMnAs by field-scan planar Hall measurements10.1038/s41598-021-89748-62045-2322https://doaj.org/article/60c466c0b9e948ed9ea8c6bc96ab00d22021-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-89748-6https://doaj.org/toc/2045-2322Abstract Spin–orbit-induced (SOI) effective magnetic field in GaMnAs film with in-plane magnetic anisotropy has been investigated by planar Hall effect measurements. The presence of SOI field was identified by a shift between planar Hall resistance (PHR) hystereses observed with positive and negative currents. The difference of switching fields occurring between the two current polarities, which is determined by the strength of the SOI field, is shown to depend on the external field direction. In this paper we have developed a method for obtaining the magnitude of the SOI fields based on magnetic free energy that includes the effects of magnetic anisotropy and the SOI field. Using this approach, the SOI field for a given current density was accurately obtained by fitting to the observed dependence of the switching fields on the applied field directions. Values of the SOI field obtained with field scan PHR measurements give results that are consistent with those obtained by analyzing the angular dependence of PHR, indicating the reliability of the field scan PHR method for quantifying the SOI-field in GaMnAs films. The magnitude of the SOI field systematically increases with increasing current density, demonstrating the usefulness of SOI fields for manipulation of magnetization by current in GaMnAs films.Seongjoon ParkShinwoo LeeKyung Jae LeeSeongJin ParkPhunvira ChongthanaphisutJiyeong JangSanghoon LeeXinyu LiuM. DobrowolskaJacek K. FurdynaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Seongjoon Park Shinwoo Lee Kyung Jae Lee SeongJin Park Phunvira Chongthanaphisut Jiyeong Jang Sanghoon Lee Xinyu Liu M. Dobrowolska Jacek K. Furdyna Quantitative determination of spin–orbit-induced magnetic field in GaMnAs by field-scan planar Hall measurements
description	Abstract Spin–orbit-induced (SOI) effective magnetic field in GaMnAs film with in-plane magnetic anisotropy has been investigated by planar Hall effect measurements. The presence of SOI field was identified by a shift between planar Hall resistance (PHR) hystereses observed with positive and negative currents. The difference of switching fields occurring between the two current polarities, which is determined by the strength of the SOI field, is shown to depend on the external field direction. In this paper we have developed a method for obtaining the magnitude of the SOI fields based on magnetic free energy that includes the effects of magnetic anisotropy and the SOI field. Using this approach, the SOI field for a given current density was accurately obtained by fitting to the observed dependence of the switching fields on the applied field directions. Values of the SOI field obtained with field scan PHR measurements give results that are consistent with those obtained by analyzing the angular dependence of PHR, indicating the reliability of the field scan PHR method for quantifying the SOI-field in GaMnAs films. The magnitude of the SOI field systematically increases with increasing current density, demonstrating the usefulness of SOI fields for manipulation of magnetization by current in GaMnAs films.
format	article
author	Seongjoon Park Shinwoo Lee Kyung Jae Lee SeongJin Park Phunvira Chongthanaphisut Jiyeong Jang Sanghoon Lee Xinyu Liu M. Dobrowolska Jacek K. Furdyna
author_facet	Seongjoon Park Shinwoo Lee Kyung Jae Lee SeongJin Park Phunvira Chongthanaphisut Jiyeong Jang Sanghoon Lee Xinyu Liu M. Dobrowolska Jacek K. Furdyna
author_sort	Seongjoon Park
title	Quantitative determination of spin–orbit-induced magnetic field in GaMnAs by field-scan planar Hall measurements
title_short	Quantitative determination of spin–orbit-induced magnetic field in GaMnAs by field-scan planar Hall measurements
title_full	Quantitative determination of spin–orbit-induced magnetic field in GaMnAs by field-scan planar Hall measurements
title_fullStr	Quantitative determination of spin–orbit-induced magnetic field in GaMnAs by field-scan planar Hall measurements
title_full_unstemmed	Quantitative determination of spin–orbit-induced magnetic field in GaMnAs by field-scan planar Hall measurements
title_sort	quantitative determination of spin–orbit-induced magnetic field in gamnas by field-scan planar hall measurements
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/60c466c0b9e948ed9ea8c6bc96ab00d2
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Quantitative determination of spin–orbit-induced magnetic field in GaMnAs by field-scan planar Hall measurements

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