Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications

Abstract This paper describes the fabrication process and characteristics of dimension- and position-controlled gallium nitride (GaN) microstructure arrays grown on graphene films and their quantum structures for use in flexible light-emitting device applications. The characteristics of dimension- a...

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Autores principales:	Dongha Yoo, Keundong Lee, Youngbin Tchoe, Puspendu Guha, Asad Ali, Rajendra K. Saroj, Seokje Lee, A. B. M. Hamidul Islam, Miyoung Kim, Gyu-Chul Yi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/6213c6cdc7ce4c4f99b8ce6755399cd0
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spelling	oai:doaj.org-article:6213c6cdc7ce4c4f99b8ce6755399cd02021-12-02T17:51:16ZDimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications10.1038/s41598-021-97048-22045-2322https://doaj.org/article/6213c6cdc7ce4c4f99b8ce6755399cd02021-09-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-97048-2https://doaj.org/toc/2045-2322Abstract This paper describes the fabrication process and characteristics of dimension- and position-controlled gallium nitride (GaN) microstructure arrays grown on graphene films and their quantum structures for use in flexible light-emitting device applications. The characteristics of dimension- and position-controlled growth, which is crucial to fabricate high-performance electronic and optoelectronic devices, were investigated using scanning and transmission electron microscopes and power-dependent photoluminescence spectroscopy measurements. Among the GaN microstructures, GaN microrods exhibited excellent photoluminescence characteristics including room-temperature stimulated emission, which is especially useful for optoelectronic device applications. As one of the device applications of the position-controlled GaN microrod arrays, we fabricated light-emitting diodes (LEDs) by heteroepitaxially growing InxGa1−xN/GaN multiple quantum wells (MQWs) and a p-type GaN layer on the surfaces of GaN microrods and by depositing Ti/Au and Ni/Au metal layers to prepare n-type and p-type ohmic contacts, respectively. Furthermore, the GaN microrod LED arrays were transferred onto Cu foil by using the chemical lift-off method. Even after being transferred onto the flexible Cu foil substrate, the microrod LEDs exhibited strong emission of visible blue light. The proposed method to enable the dimension- and position-controlled growth of GaN microstructures on graphene films can likely be used to fabricate other high-quality flexible inorganic semiconductor devices such as micro-LED displays with an ultrahigh resolution.Dongha YooKeundong LeeYoungbin TchoePuspendu GuhaAsad AliRajendra K. SarojSeokje LeeA. B. M. Hamidul IslamMiyoung KimGyu-Chul YiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Dongha Yoo Keundong Lee Youngbin Tchoe Puspendu Guha Asad Ali Rajendra K. Saroj Seokje Lee A. B. M. Hamidul Islam Miyoung Kim Gyu-Chul Yi Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications
description	Abstract This paper describes the fabrication process and characteristics of dimension- and position-controlled gallium nitride (GaN) microstructure arrays grown on graphene films and their quantum structures for use in flexible light-emitting device applications. The characteristics of dimension- and position-controlled growth, which is crucial to fabricate high-performance electronic and optoelectronic devices, were investigated using scanning and transmission electron microscopes and power-dependent photoluminescence spectroscopy measurements. Among the GaN microstructures, GaN microrods exhibited excellent photoluminescence characteristics including room-temperature stimulated emission, which is especially useful for optoelectronic device applications. As one of the device applications of the position-controlled GaN microrod arrays, we fabricated light-emitting diodes (LEDs) by heteroepitaxially growing InxGa1−xN/GaN multiple quantum wells (MQWs) and a p-type GaN layer on the surfaces of GaN microrods and by depositing Ti/Au and Ni/Au metal layers to prepare n-type and p-type ohmic contacts, respectively. Furthermore, the GaN microrod LED arrays were transferred onto Cu foil by using the chemical lift-off method. Even after being transferred onto the flexible Cu foil substrate, the microrod LEDs exhibited strong emission of visible blue light. The proposed method to enable the dimension- and position-controlled growth of GaN microstructures on graphene films can likely be used to fabricate other high-quality flexible inorganic semiconductor devices such as micro-LED displays with an ultrahigh resolution.
format	article
author	Dongha Yoo Keundong Lee Youngbin Tchoe Puspendu Guha Asad Ali Rajendra K. Saroj Seokje Lee A. B. M. Hamidul Islam Miyoung Kim Gyu-Chul Yi
author_facet	Dongha Yoo Keundong Lee Youngbin Tchoe Puspendu Guha Asad Ali Rajendra K. Saroj Seokje Lee A. B. M. Hamidul Islam Miyoung Kim Gyu-Chul Yi
author_sort	Dongha Yoo
title	Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications
title_short	Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications
title_full	Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications
title_fullStr	Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications
title_full_unstemmed	Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications
title_sort	dimension- and position-controlled growth of gan microstructure arrays on graphene films for flexible device applications
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/6213c6cdc7ce4c4f99b8ce6755399cd0
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_version_	1718379288793710592

Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications

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