Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature

Abstract In this study, the high-density SiC/SiO2 core–shell nanowires were synthesized on the nickel coated SiO2 (100 nm)/Si substrate by chemical vapor deposition (CVD) method with ferrocene precursor at temperature 1000 °C compared to previous studies (1300–1600 °C). The present work provides an...

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Autores principales: Bo-Yu Chen, Chong-Chi Chi, Wen-Kuang Hsu, Hao Ouyang
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Publicado: Nature Portfolio 2021
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spelling oai:doaj.org-article:621e9c1932c34cf0b6a79125de616ecc2021-12-02T15:08:22ZSynthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature10.1038/s41598-020-80580-y2045-2322https://doaj.org/article/621e9c1932c34cf0b6a79125de616ecc2021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-80580-yhttps://doaj.org/toc/2045-2322Abstract In this study, the high-density SiC/SiO2 core–shell nanowires were synthesized on the nickel coated SiO2 (100 nm)/Si substrate by chemical vapor deposition (CVD) method with ferrocene precursor at temperature 1000 °C compared to previous studies (1300–1600 °C). The present work provides an efficient strategy for the production of SiC/SiO2 nanowires with uniform morphology and good optical properties, where the Ni layer plays important roles for this fabrication at low temperature which reduces the decomposition temperature of hydrocarbon gases and improves the growth quality of SiC nanowires. The as-synthesized SiC/SiO2 nanowires consist of single crystal 3C structures as well as 3C structures with defects along [111] direction. In the photoluminescence (PL) spectrum, the SiC/SiO2 core–shell nanowires revealed an obvious blueshift. The blueshift is due to the formation of nanoscale silicon carbide polytypism caused by the stacking faults in 3C–SiC and the nanoscale polytypism also caused the transition from indirect to direct bandgap which explains why the stacking faults percentage in SiC confirmed from X-ray diffraction (XRD) is 19%, but ultimately makes the strongest emission intensity. Finally, the PL characteristics are further improved by changing the diameter of the SiC nanowire and etching and an approximate model followed by the vapor–liquid–solid (VLS) mechanism was proposed to explain the possible growth mechanism of the SiC/SiO2 nanowires.Bo-Yu ChenChong-Chi ChiWen-Kuang HsuHao OuyangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Bo-Yu Chen
Chong-Chi Chi
Wen-Kuang Hsu
Hao Ouyang
Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature
description Abstract In this study, the high-density SiC/SiO2 core–shell nanowires were synthesized on the nickel coated SiO2 (100 nm)/Si substrate by chemical vapor deposition (CVD) method with ferrocene precursor at temperature 1000 °C compared to previous studies (1300–1600 °C). The present work provides an efficient strategy for the production of SiC/SiO2 nanowires with uniform morphology and good optical properties, where the Ni layer plays important roles for this fabrication at low temperature which reduces the decomposition temperature of hydrocarbon gases and improves the growth quality of SiC nanowires. The as-synthesized SiC/SiO2 nanowires consist of single crystal 3C structures as well as 3C structures with defects along [111] direction. In the photoluminescence (PL) spectrum, the SiC/SiO2 core–shell nanowires revealed an obvious blueshift. The blueshift is due to the formation of nanoscale silicon carbide polytypism caused by the stacking faults in 3C–SiC and the nanoscale polytypism also caused the transition from indirect to direct bandgap which explains why the stacking faults percentage in SiC confirmed from X-ray diffraction (XRD) is 19%, but ultimately makes the strongest emission intensity. Finally, the PL characteristics are further improved by changing the diameter of the SiC nanowire and etching and an approximate model followed by the vapor–liquid–solid (VLS) mechanism was proposed to explain the possible growth mechanism of the SiC/SiO2 nanowires.
format article
author Bo-Yu Chen
Chong-Chi Chi
Wen-Kuang Hsu
Hao Ouyang
author_facet Bo-Yu Chen
Chong-Chi Chi
Wen-Kuang Hsu
Hao Ouyang
author_sort Bo-Yu Chen
title Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature
title_short Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature
title_full Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature
title_fullStr Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature
title_full_unstemmed Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature
title_sort synthesis of sic/sio2 core–shell nanowires with good optical properties on ni/sio2/si substrate via ferrocene pyrolysis at low temperature
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/621e9c1932c34cf0b6a79125de616ecc
work_keys_str_mv AT boyuchen synthesisofsicsio2coreshellnanowireswithgoodopticalpropertiesonnisio2sisubstrateviaferrocenepyrolysisatlowtemperature
AT chongchichi synthesisofsicsio2coreshellnanowireswithgoodopticalpropertiesonnisio2sisubstrateviaferrocenepyrolysisatlowtemperature
AT wenkuanghsu synthesisofsicsio2coreshellnanowireswithgoodopticalpropertiesonnisio2sisubstrateviaferrocenepyrolysisatlowtemperature
AT haoouyang synthesisofsicsio2coreshellnanowireswithgoodopticalpropertiesonnisio2sisubstrateviaferrocenepyrolysisatlowtemperature
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