Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation

Abstract Point defects in SiC are an attractive platform for quantum information and sensing applications because they provide relatively long spin coherence times, optical spin initialization, and spin-dependent fluorescence readout in a fabrication-friendly semiconductor. The ability to precisely...

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Autores principales:	Shojan P. Pavunny, Andrew L. Yeats, Hunter B. Banks, Edward Bielejec, Rachael L. Myers-Ward, Matthew T. DeJarld, Allan S. Bracker, D. Kurt Gaskill, Samuel G. Carter
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/623a745ff30d4bdc816bf4a64f9b72ff
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spelling	oai:doaj.org-article:623a745ff30d4bdc816bf4a64f9b72ff2021-12-02T14:11:32ZArrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation10.1038/s41598-021-82832-x2045-2322https://doaj.org/article/623a745ff30d4bdc816bf4a64f9b72ff2021-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-82832-xhttps://doaj.org/toc/2045-2322Abstract Point defects in SiC are an attractive platform for quantum information and sensing applications because they provide relatively long spin coherence times, optical spin initialization, and spin-dependent fluorescence readout in a fabrication-friendly semiconductor. The ability to precisely place these defects at the optimal location in a host material with nano-scale accuracy is desirable for integration of these quantum systems with traditional electronic and photonic structures. Here, we demonstrate the precise spatial patterning of arrays of silicon vacancy ( $${V}_{Si}$$ V Si ) emitters in an epitaxial 4H-SiC (0001) layer through mask-less focused ion beam implantation of Li+. We characterize these arrays with high-resolution scanning confocal fluorescence microscopy on the Si-face, observing sharp emission lines primarily coming from the $${V1}^{{\prime}}$$ V 1 ′ zero-phonon line (ZPL). The implantation dose is varied over 3 orders of magnitude, leading to $${V}_{Si}$$ V Si densities from a few per implantation spot to thousands per spot, with a linear dependence between ZPL emission and implantation dose. Optically-detected magnetic resonance (ODMR) is also performed, confirming the presence of V2 $${V}_{Si}$$ V Si . Our investigation reveals scalable and reproducible defect generation.Shojan P. PavunnyAndrew L. YeatsHunter B. BanksEdward BielejecRachael L. Myers-WardMatthew T. DeJarldAllan S. BrackerD. Kurt GaskillSamuel G. CarterNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Shojan P. Pavunny Andrew L. Yeats Hunter B. Banks Edward Bielejec Rachael L. Myers-Ward Matthew T. DeJarld Allan S. Bracker D. Kurt Gaskill Samuel G. Carter Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation
description	Abstract Point defects in SiC are an attractive platform for quantum information and sensing applications because they provide relatively long spin coherence times, optical spin initialization, and spin-dependent fluorescence readout in a fabrication-friendly semiconductor. The ability to precisely place these defects at the optimal location in a host material with nano-scale accuracy is desirable for integration of these quantum systems with traditional electronic and photonic structures. Here, we demonstrate the precise spatial patterning of arrays of silicon vacancy ( $${V}_{Si}$$ V Si ) emitters in an epitaxial 4H-SiC (0001) layer through mask-less focused ion beam implantation of Li+. We characterize these arrays with high-resolution scanning confocal fluorescence microscopy on the Si-face, observing sharp emission lines primarily coming from the $${V1}^{{\prime}}$$ V 1 ′ zero-phonon line (ZPL). The implantation dose is varied over 3 orders of magnitude, leading to $${V}_{Si}$$ V Si densities from a few per implantation spot to thousands per spot, with a linear dependence between ZPL emission and implantation dose. Optically-detected magnetic resonance (ODMR) is also performed, confirming the presence of V2 $${V}_{Si}$$ V Si . Our investigation reveals scalable and reproducible defect generation.
format	article
author	Shojan P. Pavunny Andrew L. Yeats Hunter B. Banks Edward Bielejec Rachael L. Myers-Ward Matthew T. DeJarld Allan S. Bracker D. Kurt Gaskill Samuel G. Carter
author_facet	Shojan P. Pavunny Andrew L. Yeats Hunter B. Banks Edward Bielejec Rachael L. Myers-Ward Matthew T. DeJarld Allan S. Bracker D. Kurt Gaskill Samuel G. Carter
author_sort	Shojan P. Pavunny
title	Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation
title_short	Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation
title_full	Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation
title_fullStr	Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation
title_full_unstemmed	Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation
title_sort	arrays of si vacancies in 4h-sic produced by focused li ion beam implantation
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/623a745ff30d4bdc816bf4a64f9b72ff
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Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation

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