Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field

Using the effective mass approximation in a parabolic two-band model, we studied the effects of the geometrical parameters, on the electron and hole states, in two truncated conical quantum dots: (i) GaAs-(Ga,Al)As in the presence of a shallow donor impurity and under an applied magnetic field and (...

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Autores principales:	Lorenz Pulgar-Velásquez, José Sierra-Ortega, Juan A. Vinasco, David Laroze, Adrian Radu, Esin Kasapoglu, Ricardo L. Restrepo, John A. Gil-Corrales, Alvaro L. Morales, Carlos A. Duque
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	truncated conical quantum dots exciton states donor-impurity states applied magnetic field type II quantum dots Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/62c2dac152f442cd8aeba32bd1adcab9
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spelling	oai:doaj.org-article:62c2dac152f442cd8aeba32bd1adcab92021-11-25T18:30:09ZShallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field10.3390/nano111128322079-4991https://doaj.org/article/62c2dac152f442cd8aeba32bd1adcab92021-10-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/2832https://doaj.org/toc/2079-4991Using the effective mass approximation in a parabolic two-band model, we studied the effects of the geometrical parameters, on the electron and hole states, in two truncated conical quantum dots: (i) GaAs-(Ga,Al)As in the presence of a shallow donor impurity and under an applied magnetic field and (ii) CdSe–CdTe core–shell type-II quantum dot. For the first system, the impurity position and the applied magnetic field direction were chosen to preserve the system’s azimuthal symmetry. The finite element method obtains the solution of the Schrödinger equations for electron or hole with or without impurity with an adaptive discretization of a triangular mesh. The interaction of the electron and hole states is calculated in a first-order perturbative approximation. This study shows that the magnetic field and donor impurities are relevant factors in the optoelectronic properties of conical quantum dots. Additionally, for the CdSe–CdTe quantum dot, where, again, the axial symmetry is preserved, a switch between direct and indirect exciton is possible to be controlled through geometry.Lorenz Pulgar-VelásquezJosé Sierra-OrtegaJuan A. VinascoDavid LarozeAdrian RaduEsin KasapogluRicardo L. RestrepoJohn A. Gil-CorralesAlvaro L. MoralesCarlos A. DuqueMDPI AGarticletruncated conical quantum dotsexciton statesdonor-impurity statesapplied magnetic fieldtype II quantum dotsChemistryQD1-999ENNanomaterials, Vol 11, Iss 2832, p 2832 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	truncated conical quantum dots exciton states donor-impurity states applied magnetic field type II quantum dots Chemistry QD1-999
spellingShingle	truncated conical quantum dots exciton states donor-impurity states applied magnetic field type II quantum dots Chemistry QD1-999 Lorenz Pulgar-Velásquez José Sierra-Ortega Juan A. Vinasco David Laroze Adrian Radu Esin Kasapoglu Ricardo L. Restrepo John A. Gil-Corrales Alvaro L. Morales Carlos A. Duque Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
description	Using the effective mass approximation in a parabolic two-band model, we studied the effects of the geometrical parameters, on the electron and hole states, in two truncated conical quantum dots: (i) GaAs-(Ga,Al)As in the presence of a shallow donor impurity and under an applied magnetic field and (ii) CdSe–CdTe core–shell type-II quantum dot. For the first system, the impurity position and the applied magnetic field direction were chosen to preserve the system’s azimuthal symmetry. The finite element method obtains the solution of the Schrödinger equations for electron or hole with or without impurity with an adaptive discretization of a triangular mesh. The interaction of the electron and hole states is calculated in a first-order perturbative approximation. This study shows that the magnetic field and donor impurities are relevant factors in the optoelectronic properties of conical quantum dots. Additionally, for the CdSe–CdTe quantum dot, where, again, the axial symmetry is preserved, a switch between direct and indirect exciton is possible to be controlled through geometry.
format	article
author	Lorenz Pulgar-Velásquez José Sierra-Ortega Juan A. Vinasco David Laroze Adrian Radu Esin Kasapoglu Ricardo L. Restrepo John A. Gil-Corrales Alvaro L. Morales Carlos A. Duque
author_facet	Lorenz Pulgar-Velásquez José Sierra-Ortega Juan A. Vinasco David Laroze Adrian Radu Esin Kasapoglu Ricardo L. Restrepo John A. Gil-Corrales Alvaro L. Morales Carlos A. Duque
author_sort	Lorenz Pulgar-Velásquez
title	Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
title_short	Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
title_full	Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
title_fullStr	Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
title_full_unstemmed	Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
title_sort	shallow donor impurity states with excitonic contribution in gaas/algaas and cdte/cdse truncated conical quantum dots under applied magnetic field
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/62c2dac152f442cd8aeba32bd1adcab9
work_keys_str_mv	AT lorenzpulgarvelasquez shallowdonorimpuritystateswithexcitoniccontributioningaasalgaasandcdtecdsetruncatedconicalquantumdotsunderappliedmagneticfield AT josesierraortega shallowdonorimpuritystateswithexcitoniccontributioningaasalgaasandcdtecdsetruncatedconicalquantumdotsunderappliedmagneticfield AT juanavinasco shallowdonorimpuritystateswithexcitoniccontributioningaasalgaasandcdtecdsetruncatedconicalquantumdotsunderappliedmagneticfield AT davidlaroze shallowdonorimpuritystateswithexcitoniccontributioningaasalgaasandcdtecdsetruncatedconicalquantumdotsunderappliedmagneticfield AT adrianradu shallowdonorimpuritystateswithexcitoniccontributioningaasalgaasandcdtecdsetruncatedconicalquantumdotsunderappliedmagneticfield AT esinkasapoglu shallowdonorimpuritystateswithexcitoniccontributioningaasalgaasandcdtecdsetruncatedconicalquantumdotsunderappliedmagneticfield AT ricardolrestrepo shallowdonorimpuritystateswithexcitoniccontributioningaasalgaasandcdtecdsetruncatedconicalquantumdotsunderappliedmagneticfield AT johnagilcorrales shallowdonorimpuritystateswithexcitoniccontributioningaasalgaasandcdtecdsetruncatedconicalquantumdotsunderappliedmagneticfield AT alvarolmorales shallowdonorimpuritystateswithexcitoniccontributioningaasalgaasandcdtecdsetruncatedconicalquantumdotsunderappliedmagneticfield AT carlosaduque shallowdonorimpuritystateswithexcitoniccontributioningaasalgaasandcdtecdsetruncatedconicalquantumdotsunderappliedmagneticfield
_version_	1718411077910265856

Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field

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