Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

The efficiency of quantum state readout is one of the factors that determine the performance of point defects in semiconductors in practical applications. Here the authors demonstrate photo-electrical readout for silicon vacancies in silicon carbide, providing an alternative to optical detection.

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Autores principales:	Matthias Niethammer, Matthias Widmann, Torsten Rendler, Naoya Morioka, Yu-Chen Chen, Rainer Stöhr, Jawad Ul Hassan, Shinobu Onoda, Takeshi Ohshima, Sang-Yun Lee, Amlan Mukherjee, Junichi Isoya, Nguyen Tien Son, Jörg Wrachtrup
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/6334f27812914159aa1e6f6614e6e62f
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spelling	oai:doaj.org-article:6334f27812914159aa1e6f6614e6e62f2021-12-02T15:36:23ZCoherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions10.1038/s41467-019-13545-z2041-1723https://doaj.org/article/6334f27812914159aa1e6f6614e6e62f2019-12-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-13545-zhttps://doaj.org/toc/2041-1723The efficiency of quantum state readout is one of the factors that determine the performance of point defects in semiconductors in practical applications. Here the authors demonstrate photo-electrical readout for silicon vacancies in silicon carbide, providing an alternative to optical detection.Matthias NiethammerMatthias WidmannTorsten RendlerNaoya MoriokaYu-Chen ChenRainer StöhrJawad Ul HassanShinobu OnodaTakeshi OhshimaSang-Yun LeeAmlan MukherjeeJunichi IsoyaNguyen Tien SonJörg WrachtrupNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Matthias Niethammer Matthias Widmann Torsten Rendler Naoya Morioka Yu-Chen Chen Rainer Stöhr Jawad Ul Hassan Shinobu Onoda Takeshi Ohshima Sang-Yun Lee Amlan Mukherjee Junichi Isoya Nguyen Tien Son Jörg Wrachtrup Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions
description	The efficiency of quantum state readout is one of the factors that determine the performance of point defects in semiconductors in practical applications. Here the authors demonstrate photo-electrical readout for silicon vacancies in silicon carbide, providing an alternative to optical detection.
format	article
author	Matthias Niethammer Matthias Widmann Torsten Rendler Naoya Morioka Yu-Chen Chen Rainer Stöhr Jawad Ul Hassan Shinobu Onoda Takeshi Ohshima Sang-Yun Lee Amlan Mukherjee Junichi Isoya Nguyen Tien Son Jörg Wrachtrup
author_facet	Matthias Niethammer Matthias Widmann Torsten Rendler Naoya Morioka Yu-Chen Chen Rainer Stöhr Jawad Ul Hassan Shinobu Onoda Takeshi Ohshima Sang-Yun Lee Amlan Mukherjee Junichi Isoya Nguyen Tien Son Jörg Wrachtrup
author_sort	Matthias Niethammer
title	Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions
title_short	Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions
title_full	Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions
title_fullStr	Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions
title_full_unstemmed	Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions
title_sort	coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/6334f27812914159aa1e6f6614e6e62f
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Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

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