Interactive Strength between C60 Thin Film and Si(001) and Its Influence on Nano-Scaled Tribology
The influences of interactions between C60 thin films and Si substrates were investigated using atomic force microscopy (AFM). It was found that higher friction coefficient was obtained at the C60 domains formed on the H-terminated Si(001) substrate and lower ones on the Si(001)-2×1 substr...
Guardado en:
| Autores principales: | , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Japanese Society of Tribologists
2008
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/635ec5ab164e4de7bb21f83e26888677 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | The influences of interactions between C60 thin films and Si substrates were investigated using atomic force microscopy (AFM). It was found that higher friction coefficient was obtained at the C60 domains formed on the H-terminated Si(001) substrate and lower ones on the Si(001)-2×1 substrate. Moreover, lowest friction coefficient was found for the C60 film on the Si(001)-2×1 remained after scratching. Therefore, it is thought that higher interactions between C60 and Si substrate caused lower friction coefficient of C60 thin film. The prepared substrate was examined by reflection high energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES). |
|---|