Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale
Direct growth of large-area graphene on dielectric substrates is a promising route to wafer scale integration. Here the authors use a rapid thermal annealing process to grow graphene layers on four-inch diameter polycrystalline diamond, eliminating the need for transfer.
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/6373611551d54817bb457f812c0e44aa |
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