Optimization of Metal-Assisted Chemical Etching for Deep Silicon Nanostructures
High-aspect ratio silicon (Si) nanostructures are important for many applications. Metal-assisted chemical etching (MACE) is a wet-chemical method used for the fabrication of nanostructured Si. Two main challenges exist with etching Si structures in the nanometer range with MACE: keeping mechanical...
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MDPI AG
2021
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oai:doaj.org-article:63b30bd8e92345058d3618017d50c9b22021-11-25T18:29:57ZOptimization of Metal-Assisted Chemical Etching for Deep Silicon Nanostructures10.3390/nano111128062079-4991https://doaj.org/article/63b30bd8e92345058d3618017d50c9b22021-10-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/2806https://doaj.org/toc/2079-4991High-aspect ratio silicon (Si) nanostructures are important for many applications. Metal-assisted chemical etching (MACE) is a wet-chemical method used for the fabrication of nanostructured Si. Two main challenges exist with etching Si structures in the nanometer range with MACE: keeping mechanical stability at high aspect ratios and maintaining a vertical etching profile. In this work, we investigated the etching behavior of two zone plate catalyst designs in a systematic manner at four different MACE conditions as a function of mechanical stability and etching verticality. The zone plate catalyst designs served as models for Si nanostructures over a wide range of feature sizes ranging from 850 nm to 30 nm at 1:1 line-to-space ratio. The first design was a grid-like, interconnected catalyst (brick wall) and the second design was a hybrid catalyst that was partly isolated, partly interconnected (fishbone). Results showed that the brick wall design was mechanically stable up to an aspect ratio of 30:1 with vertical Si structures at most investigated conditions. The fishbone design showed higher mechanical stability thanks to the Si backbone in the design, but on the other hand required careful control of the reaction kinetics for etching verticality. The influence of MACE reaction kinetics was identified by lowering the oxidant concentration, lowering the processing temperature and by isopropanol addition. We report an optimized MACE condition to achieve an aspect ratio of at least 100:1 at room temperature processing by incorporating isopropanol in the etching solution.Rabia AkanUlrich VogtMDPI AGarticlemetal-assisted chemical etchingSi nanostructureshigh aspect ratiozone plateChemistryQD1-999ENNanomaterials, Vol 11, Iss 2806, p 2806 (2021) |
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metal-assisted chemical etching Si nanostructures high aspect ratio zone plate Chemistry QD1-999 |
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metal-assisted chemical etching Si nanostructures high aspect ratio zone plate Chemistry QD1-999 Rabia Akan Ulrich Vogt Optimization of Metal-Assisted Chemical Etching for Deep Silicon Nanostructures |
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High-aspect ratio silicon (Si) nanostructures are important for many applications. Metal-assisted chemical etching (MACE) is a wet-chemical method used for the fabrication of nanostructured Si. Two main challenges exist with etching Si structures in the nanometer range with MACE: keeping mechanical stability at high aspect ratios and maintaining a vertical etching profile. In this work, we investigated the etching behavior of two zone plate catalyst designs in a systematic manner at four different MACE conditions as a function of mechanical stability and etching verticality. The zone plate catalyst designs served as models for Si nanostructures over a wide range of feature sizes ranging from 850 nm to 30 nm at 1:1 line-to-space ratio. The first design was a grid-like, interconnected catalyst (brick wall) and the second design was a hybrid catalyst that was partly isolated, partly interconnected (fishbone). Results showed that the brick wall design was mechanically stable up to an aspect ratio of 30:1 with vertical Si structures at most investigated conditions. The fishbone design showed higher mechanical stability thanks to the Si backbone in the design, but on the other hand required careful control of the reaction kinetics for etching verticality. The influence of MACE reaction kinetics was identified by lowering the oxidant concentration, lowering the processing temperature and by isopropanol addition. We report an optimized MACE condition to achieve an aspect ratio of at least 100:1 at room temperature processing by incorporating isopropanol in the etching solution. |
format |
article |
author |
Rabia Akan Ulrich Vogt |
author_facet |
Rabia Akan Ulrich Vogt |
author_sort |
Rabia Akan |
title |
Optimization of Metal-Assisted Chemical Etching for Deep Silicon Nanostructures |
title_short |
Optimization of Metal-Assisted Chemical Etching for Deep Silicon Nanostructures |
title_full |
Optimization of Metal-Assisted Chemical Etching for Deep Silicon Nanostructures |
title_fullStr |
Optimization of Metal-Assisted Chemical Etching for Deep Silicon Nanostructures |
title_full_unstemmed |
Optimization of Metal-Assisted Chemical Etching for Deep Silicon Nanostructures |
title_sort |
optimization of metal-assisted chemical etching for deep silicon nanostructures |
publisher |
MDPI AG |
publishDate |
2021 |
url |
https://doaj.org/article/63b30bd8e92345058d3618017d50c9b2 |
work_keys_str_mv |
AT rabiaakan optimizationofmetalassistedchemicaletchingfordeepsiliconnanostructures AT ulrichvogt optimizationofmetalassistedchemicaletchingfordeepsiliconnanostructures |
_version_ |
1718411078288801792 |