Under-FET Thermal Sensor Enabling Smart Full-Chip Run-Time Thermal Management
This article reports design, fabrication and analysis of a novel under-transistor (under-FET) in-hole thermal sensor diode structure. Being able to accurately monitor self-heating of individual transistor in-operando, the under-FET temperature sensor enables smart full-chip run-time thermal manageme...
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/63ecbbc27e664ef08261d3efa734b889 |
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| Sumario: | This article reports design, fabrication and analysis of a novel under-transistor (under-FET) in-hole thermal sensor diode structure. Being able to accurately monitor self-heating of individual transistor in-operando, the under-FET temperature sensor enables smart full-chip run-time thermal management with spatial resolution down to single transistor level. The in-hole thermal sensors were fabricated in a CMOS process and validated in measurements. The new chip level thermal management technique was demonstrated using a prototype power amplifier (PA) IC designed in a foundry 40nm CMOS. It opens a door for self-learning based full-chip real-time intelligent thermal management for future ICs. |
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