A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET
A novel snapback-free and low turn-off loss reverse-conducting (RC) SOI-LIGBT is proposed and investigated by numerical simulations. An n-MOSFET (M<sub>N2</sub>) is embedded in the anode side of the LIGBT to short the P-anode/N-buffer junction during the turn-off transient, thus allowing...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/6424144f03ac4d178b6fd921d2b43b1e |
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| Sumario: | A novel snapback-free and low turn-off loss reverse-conducting (RC) SOI-LIGBT is proposed and investigated by numerical simulations. An n-MOSFET (M<sub>N2</sub>) is embedded in the anode side of the LIGBT to short the P-anode/N-buffer junction during the turn-off transient, thus allowing the LIGBT to be turned off rapidly without excessive tail current. In addition, M<sub>N2</sub> enable the LIGBT to conduct the reverse conducting current like the freewheeling diode. In the forward-conducting state, M<sub>N2</sub> is turned off, then the proposed LIGBT operates like a conventional one and the snap-back is avoided. The gate electrode of M<sub>N2</sub> can be controlled synchronously by the gate signal of the LIGBT which is level-shifted by a p-i-n diode (D<sub>1</sub>) and processed by an anode-controlling circuit, and therefore, the proposed RC-LIGBT still maintains a three-terminal configuration. D<sub>1</sub> and M<sub>N2</sub> are embedded in the drift region and anode-side of the LIGBT, respectively, and they can be isolated by deep-oxide trenches. The numerical simulation results reveal that the turn-off loss (<inline-formula> <tex-math notation="LaTeX">${E} _{\mathrm{ off}}$ </tex-math></inline-formula>) and reverse recovery charge of the proposed LIGBT is reduced by 58.3% and 38.9%, respectively, compared with the conventional LIGBT combining with antiparallel freewheeling diode. |
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