A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET

A novel snapback-free and low turn-off loss reverse-conducting (RC) SOI-LIGBT is proposed and investigated by numerical simulations. An n-MOSFET (M<sub>N2</sub>) is embedded in the anode side of the LIGBT to short the P-anode/N-buffer junction during the turn-off transient, thus allowing...

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Autores principales:	Jiayu Wu, Haimeng Huang, Bo Yi, Hao Hu, Huan Hu, Xing Bi Chen
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2019
Materias:	RC-LIGBT snapback-free turn-off loss reverse recovery charge Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/6424144f03ac4d178b6fd921d2b43b1e
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spelling	oai:doaj.org-article:6424144f03ac4d178b6fd921d2b43b1e2021-11-19T00:01:11ZA Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET2168-673410.1109/JEDS.2019.2939223https://doaj.org/article/6424144f03ac4d178b6fd921d2b43b1e2019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8823864/https://doaj.org/toc/2168-6734A novel snapback-free and low turn-off loss reverse-conducting (RC) SOI-LIGBT is proposed and investigated by numerical simulations. An n-MOSFET (M<sub>N2</sub>) is embedded in the anode side of the LIGBT to short the P-anode/N-buffer junction during the turn-off transient, thus allowing the LIGBT to be turned off rapidly without excessive tail current. In addition, M<sub>N2</sub> enable the LIGBT to conduct the reverse conducting current like the freewheeling diode. In the forward-conducting state, M<sub>N2</sub> is turned off, then the proposed LIGBT operates like a conventional one and the snap-back is avoided. The gate electrode of M<sub>N2</sub> can be controlled synchronously by the gate signal of the LIGBT which is level-shifted by a p-i-n diode (D<sub>1</sub>) and processed by an anode-controlling circuit, and therefore, the proposed RC-LIGBT still maintains a three-terminal configuration. D<sub>1</sub> and M<sub>N2</sub> are embedded in the drift region and anode-side of the LIGBT, respectively, and they can be isolated by deep-oxide trenches. The numerical simulation results reveal that the turn-off loss (<inline-formula> <tex-math notation="LaTeX">${E} _{\mathrm{ off}}$ </tex-math></inline-formula>) and reverse recovery charge of the proposed LIGBT is reduced by 58.3% and 38.9%, respectively, compared with the conventional LIGBT combining with antiparallel freewheeling diode.Jiayu WuHaimeng HuangBo YiHao HuHuan HuXing Bi ChenIEEEarticleRC-LIGBTsnapback-freeturn-off lossreverse recovery chargeElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 1013-1017 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	RC-LIGBT snapback-free turn-off loss reverse recovery charge Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	RC-LIGBT snapback-free turn-off loss reverse recovery charge Electrical engineering. Electronics. Nuclear engineering TK1-9971 Jiayu Wu Haimeng Huang Bo Yi Hao Hu Huan Hu Xing Bi Chen A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET
description	A novel snapback-free and low turn-off loss reverse-conducting (RC) SOI-LIGBT is proposed and investigated by numerical simulations. An n-MOSFET (M<sub>N2</sub>) is embedded in the anode side of the LIGBT to short the P-anode/N-buffer junction during the turn-off transient, thus allowing the LIGBT to be turned off rapidly without excessive tail current. In addition, M<sub>N2</sub> enable the LIGBT to conduct the reverse conducting current like the freewheeling diode. In the forward-conducting state, M<sub>N2</sub> is turned off, then the proposed LIGBT operates like a conventional one and the snap-back is avoided. The gate electrode of M<sub>N2</sub> can be controlled synchronously by the gate signal of the LIGBT which is level-shifted by a p-i-n diode (D<sub>1</sub>) and processed by an anode-controlling circuit, and therefore, the proposed RC-LIGBT still maintains a three-terminal configuration. D<sub>1</sub> and M<sub>N2</sub> are embedded in the drift region and anode-side of the LIGBT, respectively, and they can be isolated by deep-oxide trenches. The numerical simulation results reveal that the turn-off loss (<inline-formula> <tex-math notation="LaTeX">${E} _{\mathrm{ off}}$ </tex-math></inline-formula>) and reverse recovery charge of the proposed LIGBT is reduced by 58.3% and 38.9%, respectively, compared with the conventional LIGBT combining with antiparallel freewheeling diode.
format	article
author	Jiayu Wu Haimeng Huang Bo Yi Hao Hu Huan Hu Xing Bi Chen
author_facet	Jiayu Wu Haimeng Huang Bo Yi Hao Hu Huan Hu Xing Bi Chen
author_sort	Jiayu Wu
title	A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET
title_short	A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET
title_full	A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET
title_fullStr	A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET
title_full_unstemmed	A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET
title_sort	snapback-free and low turn-off loss reverse-conducting soi-ligbt with embedded diode and mosfet
publisher	IEEE
publishDate	2019
url	https://doaj.org/article/6424144f03ac4d178b6fd921d2b43b1e
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A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET

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