High-Density Patterned Array Bonding through Void-Free Divinyl Siloxane Bis-Benzocyclobutene Bonding Process

Divinylsiloxane-bis-benzocyclobutene (DVS-BCB) has attracted significant attention as an intermediate bonding material, owing to its excellent properties. However, its applications are limited, due to damage to peripheral devices at high curing temperatures and unoptimized compressive pressure. Ther...

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Autores principales:	Nam Woon Kim, Hyeonjeong Choe, Muhammad Ali Shah, Duck-Gyu Lee, Shin Hur
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	DVS-BCB bonding mechanism DVS-BCB bonding adhesive void-free DVS-BCB bonding pressure condition Organic chemistry QD241-441
Acceso en línea:	https://doaj.org/article/645ed5c9b75240b49110a5a4ee565695
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id	oai:doaj.org-article:645ed5c9b75240b49110a5a4ee565695
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spelling	oai:doaj.org-article:645ed5c9b75240b49110a5a4ee5656952021-11-11T18:42:04ZHigh-Density Patterned Array Bonding through Void-Free Divinyl Siloxane Bis-Benzocyclobutene Bonding Process10.3390/polym132136332073-4360https://doaj.org/article/645ed5c9b75240b49110a5a4ee5656952021-10-01T00:00:00Zhttps://www.mdpi.com/2073-4360/13/21/3633https://doaj.org/toc/2073-4360Divinylsiloxane-bis-benzocyclobutene (DVS-BCB) has attracted significant attention as an intermediate bonding material, owing to its excellent properties. However, its applications are limited, due to damage to peripheral devices at high curing temperatures and unoptimized compressive pressure. Therefore, it is necessary to explore the compressive pressure condition for DVS-BCB bonding. This study demonstrates an optimization process for void-free DVS-BCB bonding. The process for obtaining void-free DVS-BCB bonding is a vacuum condition of 0.03 Torr, compressive pressure of 0.6 N/mm<sup>2</sup>, and curing temperature of 250 °C for 1 h. Herein, we define two factors affecting the DVS-BCB bonding quality through the DVS-BCB bonding mechanism. For strong DVS-BCB bonding, void-free and high-density chemical bonds are required. Therefore, we observed the DVS-BCB bonding under various compressive pressure conditions at a relatively low temperature (250 °C). The presence of voids and high-density crosslinking density was examined through near-infrared confocal laser microscopy and Fourier-transform infrared microscopy. We also evaluated the adhesion of the DVS-BCB bonding, using a universal testing machine. The results suggest that the good adhesion with no voids and high crosslinking density was obtained at the compressive pressure condition of 0.6 N/mm<sup>2</sup>. We believe that the proposed process will be of great significance for applications in semiconductor and device packaging technologies.Nam Woon KimHyeonjeong ChoeMuhammad Ali ShahDuck-Gyu LeeShin HurMDPI AGarticleDVS-BCB bonding mechanismDVS-BCB bondingadhesivevoid-free DVS-BCB bondingpressure conditionOrganic chemistryQD241-441ENPolymers, Vol 13, Iss 3633, p 3633 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	DVS-BCB bonding mechanism DVS-BCB bonding adhesive void-free DVS-BCB bonding pressure condition Organic chemistry QD241-441
spellingShingle	DVS-BCB bonding mechanism DVS-BCB bonding adhesive void-free DVS-BCB bonding pressure condition Organic chemistry QD241-441 Nam Woon Kim Hyeonjeong Choe Muhammad Ali Shah Duck-Gyu Lee Shin Hur High-Density Patterned Array Bonding through Void-Free Divinyl Siloxane Bis-Benzocyclobutene Bonding Process
description	Divinylsiloxane-bis-benzocyclobutene (DVS-BCB) has attracted significant attention as an intermediate bonding material, owing to its excellent properties. However, its applications are limited, due to damage to peripheral devices at high curing temperatures and unoptimized compressive pressure. Therefore, it is necessary to explore the compressive pressure condition for DVS-BCB bonding. This study demonstrates an optimization process for void-free DVS-BCB bonding. The process for obtaining void-free DVS-BCB bonding is a vacuum condition of 0.03 Torr, compressive pressure of 0.6 N/mm<sup>2</sup>, and curing temperature of 250 °C for 1 h. Herein, we define two factors affecting the DVS-BCB bonding quality through the DVS-BCB bonding mechanism. For strong DVS-BCB bonding, void-free and high-density chemical bonds are required. Therefore, we observed the DVS-BCB bonding under various compressive pressure conditions at a relatively low temperature (250 °C). The presence of voids and high-density crosslinking density was examined through near-infrared confocal laser microscopy and Fourier-transform infrared microscopy. We also evaluated the adhesion of the DVS-BCB bonding, using a universal testing machine. The results suggest that the good adhesion with no voids and high crosslinking density was obtained at the compressive pressure condition of 0.6 N/mm<sup>2</sup>. We believe that the proposed process will be of great significance for applications in semiconductor and device packaging technologies.
format	article
author	Nam Woon Kim Hyeonjeong Choe Muhammad Ali Shah Duck-Gyu Lee Shin Hur
author_facet	Nam Woon Kim Hyeonjeong Choe Muhammad Ali Shah Duck-Gyu Lee Shin Hur
author_sort	Nam Woon Kim
title	High-Density Patterned Array Bonding through Void-Free Divinyl Siloxane Bis-Benzocyclobutene Bonding Process
title_short	High-Density Patterned Array Bonding through Void-Free Divinyl Siloxane Bis-Benzocyclobutene Bonding Process
title_full	High-Density Patterned Array Bonding through Void-Free Divinyl Siloxane Bis-Benzocyclobutene Bonding Process
title_fullStr	High-Density Patterned Array Bonding through Void-Free Divinyl Siloxane Bis-Benzocyclobutene Bonding Process
title_full_unstemmed	High-Density Patterned Array Bonding through Void-Free Divinyl Siloxane Bis-Benzocyclobutene Bonding Process
title_sort	high-density patterned array bonding through void-free divinyl siloxane bis-benzocyclobutene bonding process
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/645ed5c9b75240b49110a5a4ee565695
work_keys_str_mv	AT namwoonkim highdensitypatternedarraybondingthroughvoidfreedivinylsiloxanebisbenzocyclobutenebondingprocess AT hyeonjeongchoe highdensitypatternedarraybondingthroughvoidfreedivinylsiloxanebisbenzocyclobutenebondingprocess AT muhammadalishah highdensitypatternedarraybondingthroughvoidfreedivinylsiloxanebisbenzocyclobutenebondingprocess AT duckgyulee highdensitypatternedarraybondingthroughvoidfreedivinylsiloxanebisbenzocyclobutenebondingprocess AT shinhur highdensitypatternedarraybondingthroughvoidfreedivinylsiloxanebisbenzocyclobutenebondingprocess
_version_	1718431765805137920

High-Density Patterned Array Bonding through Void-Free Divinyl Siloxane Bis-Benzocyclobutene Bonding Process

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