Mobility overestimation due to gated contacts in organic field-effect transistors
Charge mobility, extracted from current–voltage curves, is an important parameter for evaluating the performance of organic field-effect transistors. Bittle et al. show that charge mobility can be overestimated by one order of magnitude due to the gate bias dependence of the charge injection process...
Guardado en:
| Autores principales: | , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/6467caace8024de1b053a2a0bc33e81b |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | Charge mobility, extracted from current–voltage curves, is an important parameter for evaluating the performance of organic field-effect transistors. Bittle et al. show that charge mobility can be overestimated by one order of magnitude due to the gate bias dependence of the charge injection process. |
|---|